Abstract:The network disorder of the a-Si1-xCx∶H films with carbon concentration lower than 20 at.% has been studied with Raman spectroscopy and photoluminescence spectroscopy (PL).Two different laser irradiation wavelengths were employed to excite the materials,one with a wavelength of 647.1 nm and an energy close to the optical gap of the material,can penetrate fairly deep into the material,whereas the other with a wavelength of 488.0 nm and an energy higher than the optical gap,can be almost completely absorbed by the surface of the materials.The variations in penetration depth result in significant differences between Raman spectra and PL spectra.These results indicate that there exist high density defects in the layers close to the surface,and that the spatial fluctuation of the gap due to variation in bulk concentrations.The complex microstructures of the films are responsible for the marked red-shift and broadening of the frequency and width of the TO mode of the Raman spectra and a small blue-shift and broadening of the PL peak when the sample was excited with a high laser energy.These observations show that in the a-Si1-xCx∶H sample,irradiation energies may strongly affect the results of Raman spectroscopy and PL measurements because of the complexity of the microstructures of the films.

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Characteristics of Luminescent Nc-Si/sio 2 Multilayers and the Influence of Annealing in Hydrogen

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Variation of Double-Peak Structure in Photoluminescence Spectra from Porous Silicon with Excitation Wavelength

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Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

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Structural properties of hydrogenated amorphous silicon carbide alloys

The Origin of Visible Photoluminescence from Silicon Oxide Thin Films Prepared by Dual-Plasma Chemical Vapor Deposition