Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Raman Scattering of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

X-Ray Diffraction Study of Alternating Nanocrystalline Silicon/Amorphous Silicon Multilayers

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Vibrational Properties of Near-Surface Regions of Silicon Nanocrystallites

Phonon Mode Study of Si Nanocrystals Using Micro-Raman Spectroscopy

Resonant Raman scattering of a-SiNx:H

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Raman Spectrum of Array-Ordered Crystalline Silicon Nanowires

Observation of Folded Acoustic Phonons in Nanocrystalline Silicon/amorphous Silicon Multilayers

Observation of Anomalously Polarized Photoluminescence in Alternating Nanocrystalline Si-amorphous Si Multilayers

Raman Analysis of Amorphous Silicon Ruthenium Thin Films Embedded with Nanocrystals

Nanocrystalline Si Studied by Beam-Based Positron Annihilation Spectroscopy

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

Structural properties of hydrogenated amorphous silicon carbide alloys

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Temperature-dependent Raman Scattering of Silicon Nanowires.

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Sub-Micron Imaging Of Sub-Surface Nanocrystalline Structure In Silicon

Direct observation and quantification of nanosecond laser induced amorphization inside silicon