Abstract:We have synthesized silicon nanocrystalline structures from thermal annealing of thin film amorphous silicon-based multilayers. The annealing procedure that was carried out in vacuum at temperatures up to 1100 °C is integrated in a X-ray diffraction (XRD) setup for real-time monitoring of the formation phases of the nanostructures. The microstructure of the crystallized films is investigated through experimental measurements combined with atomistic simulations of realistic nanocrystalline silicon (nc-Si) models. The multilayers consisting of uniformly alternating thicknesses of hydrogenated amorphous silicon and silicon oxide (SiO2) were deposited by plasma enhanced chemical vapor deposition on crystalline silicon and Corning glass substrates. The crystallized structure consisting of nc-Si structures embedded in an amorphous matrix were further characterized through XRD, Raman spectroscopy, and Fourier transform infrared measurements. We are able to show the different stages of nanostructure formation and how the sizes and the crystallized mass fraction can be controlled in our experimental synthesis. The crystallized silicon structures with large crystalline filling fractions exceeding 50% have been simulated with a robust classical molecular dynamics technique. The crystalline filling fractions and structural order of nc-Si obtained from this simulation are compared with our Raman and XRD measurements.

X-Ray Diffraction Study of Alternating Nanocrystalline Silicon/Amorphous Silicon Multilayers

Raman Scattering of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers

Observation of Anomalously Polarized Photoluminescence in Alternating Nanocrystalline Si-amorphous Si Multilayers

The Structural and Optical Properties of nc-Si/SiO2 Multilayers

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Correlation Between Light Emissions from Amorphous-Si:H/SiO 2 and Nc-Si/sio 2 Multilayers

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Comparative Study of Electroluminescence from Annealed Amorphous Sic Single Layer and Amorphous Si/Sic Multilayers

Correlation Between Light Emissions From Amorphous-Si : H/Sio2 And Nc-Si/Sio2 Multilayers

Observation of the Size-Dependent Blueshifted Electroluminescence from Nanocrystalline Si Fabricated by Krf Excimer Laser Annealing of Hydrogenated Amorphous Silicon Amorphous-Sinx : H Superlattices

Observation of Folded Acoustic Phonons in Nanocrystalline Silicon/amorphous Silicon Multilayers

Electrically Driven Luminescence of Nanocrystalline Si/SiO2 Multilayers on Various Substrates

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

Nanocrystal and Interface Defects Related Photoluminescence in Silicon-Rich Al2O3 Films

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructure properties of nanocrystalline silicon/SiO2 multilayers fabricated by laser-induced crystallization