Abstract:Quantum size effects are commonly observed in semiconductor nanocrystals and quantum dots. Here, we demonstrate unexpected quantum size effects in an unusual bulk system with multiple interfaces, consisting of alternating layers of nanocrystalline silicon (nc-Si:H) and amorphous silicon (a-Si:H) material thin films. The nc-Si:H layers consist of silicon nanocrystals embedded in an amorphous matrix, with an amorphous-crystalline interface separating the two structures. Plasma-enhanced chemical vapor deposition was utilized to grow nanocrystalline-amorphous silicon superlattices with a varying thickness of the nanocrystalline layer. Strong visible photoluminescence at room temperature was deconvoluted into individual peaks. As the nanocrystalline silicon layer thickness was increased from 5 to 20 nm, the photoluminescence spectra red-shifted with the emission wavelength varying as d2 (d is the size of the nanocrystallites), the characteristic signature underlying quantum size effects. The size d of the nanocrystals was estimated by the measured shift of the Raman peak, and could be tuned by varying the thickness of the nc-Si:H layers. High resolution transmission electron microscopy show nanocrystals with a narrow size distribution, in an amorphous matrix. We also observe long wavelength photoluminescence from interfacial states that leads to persistent photconductivity. Nanocrystalline-amorphous superlattices offer a unique pathway for synthesizing embedded nanocrystals with controlled sizes and photonic signatures.

Observation of the Size-Dependent Blueshifted Electroluminescence from Nanocrystalline Si Fabricated by Krf Excimer Laser Annealing of Hydrogenated Amorphous Silicon Amorphous-Sinx : H Superlattices

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

Green Electro- And Photoluminescence From Nanocrystalline Si Film Prepared By Continuous Wave Ar+ Laser Annealing Of Heavily Phosphorus Doped Hydrogenated Amorphous Silicon Film

Electroluminescence of Silicon-Rich Silicon Nitride Light-Emitting Devices

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Microstructures and Visible Photoluminescence of Excimer Laser Crystallized A-Si:H/A-Sinx:H Multiquantum Wells

Light Emission from Si Nanoclusters Formed at Low Temperatures

Evolution of Electroluminescence from Silicon Nitride Light-Emitting Devices Via Nanostructural Silver

Quantum size effects and tunable visible photoluminescence in a-Si:H/nc-Si:H superlattices

Preparation of a Single Layer of Luminescent Nanocrystalline Si Structures by Laser Irradiation Method

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

X-Ray Diffraction Study of Alternating Nanocrystalline Silicon/Amorphous Silicon Multilayers

Optical Properties of High Photoluminescence Silicon Nanocrystals Embedded in SiO2 Matrices Obtained by Annealing Hydrogen Silsesquioxane

A New Way of Fabricating Luminescent Silicon Crystallites by Excimer Laser Annealing of A-Si:H

Electron Field Emission of Nanocrystalline Si Prepared by Laser Crystallization

Enhanced Green to Red Photoluminescence in Thermally Annealed of Amorphous-Si:H/sio2 Multilayers

An approach to obtain single layer of nanostructured Si by laser irradiation on ultrathin amorphous Si films

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers