Green Electro- And Photoluminescence From Nanocrystalline Si Film Prepared By Continuous Wave Ar+ Laser Annealing Of Heavily Phosphorus Doped Hydrogenated Amorphous Silicon Film

Mx Wang,Kj Chen,L He,W Li,J Xu,Xf Huang

DOI: https://doi.org/10.1063/1.121782

IF: 4

1998-01-01

Applied Physics Letters

Abstract:A thin layer of plasma enhanced chemical vapor deposited (PECVD) heavily phosphorus doped hydrogenated amorphous silicon (a-Si:H) film was annealed by cw Ar+ laser scanning. Different from conventionally prepared polycrystalline Si films, it was found that nanocrystalline Si (nc-Si) was formed in our laser annealed sample. Room-temperature green electroluminescence (EL) peaked at 530 nm was achieved from our nc-Si film. Photoluminescence (PL) from the same sample also shows the 530 nm green peak, in addition to the red peak located at 680 nm. The film had a rather high electrical conductivity of 10S/cm as well. The light emitting and highly conductive nc-Si film provides a new possibility to fabricate optoelectronic devices along with the well-developed laser annealing techniques of a-Si:H. (C) 1998 American institute of Physics.