Abstract:We employed a KrF excimer pulsed laser source with wavelength of 248 nm, through a phase shifting mask grating to form a periodic, high intensity contrast patterned laser beam on the surface of a-Si:H (4 nm)/a-SiNx:H (10 nm) multilayers (MLs). The patterned local phase transition occurs in the each ultrathin a-Si:H sublayer and a nc-Si with stripe pattern structure is formed simultaneously. Micro-Raman measurements confirm crystallization in the stripe patterns. The cross-section transmission electron microscopy and atomic force microscopy images demonstrate that the crystallized sample shows a three-dimensional ordered structure of nc-Si, which has longitudinal order with 14 nm periodicity confined by SiNx sublayers in the MLs and lateral order with 2 μm periodicity by patterned local crystallization. Finally, the laser induced constrained crystallization processes within a-Si:H/a-SiNx:H MLs both in the longitudinal and the lateral directions are discussed.

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

Microstructures and Visible Photoluminescence of Excimer Laser Crystallized A-Si:H/A-Sinx:H Multiquantum Wells

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Photoluminescence During the Crystallization of A-Si∶h/sio2 Multilayers

Observation of the Size-Dependent Blueshifted Electroluminescence from Nanocrystalline Si Fabricated by Krf Excimer Laser Annealing of Hydrogenated Amorphous Silicon Amorphous-Sinx : H Superlattices

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

AFM and HREM observation of the pulse laser interference crystallized a-Si:H/a-SiNx:H multilayers

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers

Three-Dimensional Ordered Nano-Crystalline Si Made by Pulsed Laser Interference Crystallization of A-Si : H/A-Sinx : H Multilayers

AFM and HREM Observation of the Pulse Laser Interference Crystallized a--Si:H/a-SiN<sub>x</sub>:H Multilayers

Visible Photoluminescence Originated from Various Mechanisms During Step by Step Annealing

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Photoluminescence from A-Si : H/Sio2 Multilayers Fabricated Using in Situ Layer by Layer Plasma Oxidation