Abstract:Hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films, which contain nanosize SiC crystals embedded in a-SiC:H matrix were fabricated by the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique. It was found that under the deposition conditions of strong hydrogen dilutions and high microwave power, films containing SiC nanocrystallites embedded in an SiC:H amorphous matrix could be obtained, as shown by the use of high resolution transmission electron microscopy. Infrared absorption, Raman scattering and X-ray photoelectron spectroscopy studies have also confirmed the successful fabrication of these nc-SiC:H films. Very strong photoluminescence in the visible range with a peak energy of 2.64 eV could be observed from these films at room temperature. Temporal evolution of the PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of ps and ns. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. The results obtained in this study show that these nc-SiC:H films are potentially suitable as active layers in large area flat panel displays.

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Room Temperature Visible Electroluminescence in Silicon Nanostructures

The Room-Temperature Visible Photoluminescence from Nanocrystalline Si in Si/Sinx Superlattices

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

Microstructures and Visible Photoluminescence of Excimer Laser Crystallized A-Si:H/A-Sinx:H Multiquantum Wells

Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Strong room temperature photoluminescence of a-SiNx:H films

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

Air-stable full-visible-spectrum emission from silicon nanocrystals synthesized by an all-gas-phase plasma approach.

Electroluminescence from Si Nanocrystals by Annealing Amorphous Silicon Carbide Films

Laser crystallization technique for preparation of visible luminescent silicon quantum-well

Light Emission from Si Nanoclusters Formed at Low Temperatures

Observation of the Size-Dependent Blueshifted Electroluminescence from Nanocrystalline Si Fabricated by Krf Excimer Laser Annealing of Hydrogenated Amorphous Silicon Amorphous-Sinx : H Superlattices

Photoluminescence Properties of Alternating Nanocrystalline Silicon/amorphous Silicon Multilayers