Abstract:By ablating a ceramic SiC target with pulsed ArF excimer laser, SiC films were prepared on Si (100) substrate. After annealing in vacuum (10 -3 Pa) at different temperatures, the films were examined with FTIR, XRD, TEM, XPS and PL spectroscopy to investigate the optimal temperature of crystallization, surface morphology, crystal structure and composition. The films deposited on Si(100) substrates at 800°C are all composed of amorphous SiC. The nucleation-growth transformation occurs in SiC films annealed in vacuum at a temperature between 850°C and 1050°C. The films are crystallized optimally at 980°C. The transformation from 3C-SiC to 6H-SiC and/or the growth and annihilation of 3C-SiC may occur in the films with the increase of the annealing temperature (6H-SiC and/or 3C-SiC exist in the film annealed at the optimal temperature). Excited by 370 nm light at room temperature, the film shows a strong emission peak at 447 nm. The emission may be assigned to the recombined radiative transition between the valence band and the shallow donor levels induced by the vacancies and other crystal defects.

Laser crystallization technique for preparation of visible luminescent silicon quantum-well

Visible Photoluminescence in Crystallized Amorphous Sih/Sinxh Multiquantum-Well Structures

Visible photoluminescence in crystallized amorphous Si:H/SiN<i>x</i>:H multiquantum-well structures

Microstructures and Visible Photoluminescence of Excimer Laser Crystallized A-Si:H/A-Sinx:H Multiquantum Wells

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Visible electroluminescence from crystallized a-Si:H/a-SiNx:H multiquantum well structures

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Visible Photo- and Electro-Luminescence from Laser-Crystallized A-Si:H and Its Based Multilayers

Visible Light Emission from Crystallized Hydrogenated Amorphous Germanium/silicon Nitride Multiquantum-Well Structures

Room Temperature Visible Electroluminescence in Silicon Nanostructures

Visible Electroluminescence from Pulsed Laser Annealed A-Si : H/A-Sinx : H Superlattices on Silicon Wafer

Radiative Transition with Visible Light in Crystallized Age:H/asinx:h Multiquantum-Well Structures

Stable Electroluminescence and Its Mechanism in Laser Crystallized A-Si:H/a-sinx:h Superlattices

A detailed photoluminescence study of crystallized a-Si:H multiquantum-well structures

A Luminescent Si Quantum Dots Films - Preparation And Characterization

Ar+ laser crystallization of a-Si:H film for active layer of TFT

A New Way of Fabricating Luminescent Silicon Crystallites by Excimer Laser Annealing of A-Si:H

Visible luminescence from hydrogenated amorphous silicon modified by femtosecond laser radiation

The Effect Of Laser Crystallization On The Carrier Transport And Electroluminescence From Nanocrystalline Si/Sio2 Multilayers

Step-by-Step Laser Crystallization of Amorphous Si:H/SiN X :H Multilayer for Active Layer in Microcavities

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells