Abstract:The silicon-based materials,such as silicon nitride,silicon carbide and silicon oxide etc,have been studied extensively both for their optical and electric characteristics.Especially,the luminescent be-haviors have been attracting much attention in order to develop Si-based light emitting diodes and even laser.Recently,strong blue to red light emission have been observed in amorphous silicon nitride in some reports.Also the photoluminescence and electroluminescence of silicon oxide have been realized and the silicon-based optical gain was also demonstrated.In this report,the optical characteristics of a series of amorphous silicon carbide films with different ratio of carbon to silicon have been studied.The ratio is controlled by changing the gas ratio(R)of methane to silane from 2 to 15,which resulted in different bonding configurations,microstructures and different optical characteristics,such as luminescence behavior and refraction index.Photoluminescence excited by Ar+ 488 nm laser and by the continuous wavelength xenon lamp,FTIR and Raman scattering have been used to analyze and explain the character and the micro structure of the films.It was found that the strong luminescence can be observed for samples deposited at R10.The luminescence peak and intensity was obviously changed after step by step steady-furnace-annealing from 400 ℃ to 800 ℃.The Gaussian-simulation indicated that two luminescence bands appear in all the spectra for the samples annealed at the different temperatures and their intensities were changed with the annealing temperature.This illustrated the transformation of the microstructure of the films at different annealing temperatures.The luminescence can be related to the radiative recombination of the electron-holes in the localized tail states which are excited in the extended states.The blue light emission can be found for samples deposited at R10 and the luminescence intensity was enhanced after post-annealing under UV light excitation.Based on the optical properties of a-SiC films,all a-SiC film based optical microcavities were designed and prepared by controlling the thickness and composition of a-SiC films.The resonant enhancement of luminescence band at 650 nm was achieved and the luminescence band was significantly narrowed.The modulation effect due to the existence of micro-cavity was demonstrated.The present results revealed the possibility to realize the solid state microcavity light emitting diodes.

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Effect of Temperature on the Emission Properties of Quasi 2D Glass-Like Carbon Placed on Silicon and Silicon Dioxide Substrates

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Excimer laser recrystallization of amorphous Si films characterized by grazing X-ray diffraction and optical reflectivity

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Exploring crystal recovery and dopant activation in coated laser annealing on ion implanted 4H–SiC epitaxial layers

Photoluminescence Properties of Er-Doped Si/Al_2O_3 Multilayer Films

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

Comparison study of the femtosecond laser-induced surface structures on silicon at an elevated temperature.

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Pulsed Laser Heating-induced Surface Rapid Cooling and Amorphization

Femtosecond Laser-Induced Phase Transformation on Single-Crystal 6H-SiC

Optical properties of excimer laser annealed polycrystalline Si by spectroscopic ellipsometry

Annealing temperature dependence of Er3+ photoluminescence in alternately Er-doped Si-rich Al2O3 multilayer film

Effect of laser annealing on amorphous silicon carbide films prepared by PECVD