Abstract:The silicon-based materials,such as silicon nitride,silicon carbide and silicon oxide etc,have been studied extensively both for their optical and electric characteristics.Especially,the luminescent be-haviors have been attracting much attention in order to develop Si-based light emitting diodes and even laser.Recently,strong blue to red light emission have been observed in amorphous silicon nitride in some reports.Also the photoluminescence and electroluminescence of silicon oxide have been realized and the silicon-based optical gain was also demonstrated.In this report,the optical characteristics of a series of amorphous silicon carbide films with different ratio of carbon to silicon have been studied.The ratio is controlled by changing the gas ratio(R)of methane to silane from 2 to 15,which resulted in different bonding configurations,microstructures and different optical characteristics,such as luminescence behavior and refraction index.Photoluminescence excited by Ar+ 488 nm laser and by the continuous wavelength xenon lamp,FTIR and Raman scattering have been used to analyze and explain the character and the micro structure of the films.It was found that the strong luminescence can be observed for samples deposited at R10.The luminescence peak and intensity was obviously changed after step by step steady-furnace-annealing from 400 ℃ to 800 ℃.The Gaussian-simulation indicated that two luminescence bands appear in all the spectra for the samples annealed at the different temperatures and their intensities were changed with the annealing temperature.This illustrated the transformation of the microstructure of the films at different annealing temperatures.The luminescence can be related to the radiative recombination of the electron-holes in the localized tail states which are excited in the extended states.The blue light emission can be found for samples deposited at R10 and the luminescence intensity was enhanced after post-annealing under UV light excitation.Based on the optical properties of a-SiC films,all a-SiC film based optical microcavities were designed and prepared by controlling the thickness and composition of a-SiC films.The resonant enhancement of luminescence band at 650 nm was achieved and the luminescence band was significantly narrowed.The modulation effect due to the existence of micro-cavity was demonstrated.The present results revealed the possibility to realize the solid state microcavity light emitting diodes.

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Hydrogenated Nanocrystalline Silicon Carbide Films Synthesized by ECR-CVD and Its Intense Visible Photoluminescence at Room Temperature

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Uv-Blue Photoluminescence from Close-Packed Sic Nanocrystal Film

Electron Transition Pathways of Photoluminescence from 3C-Sic Nanocrystals Unraveled by Steady-State, Blinking and Time-Resolved Photoluminescence Measurements

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Light Emission from Si Nanoclusters Formed at Low Temperatures

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Light Emission Properties and Mechanism of Low-Temperature Prepared Amorphous Sinx Films. I. Room-Temperature Band Tail States Photoluminescence

Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

Fully Radiative Relaxation Of Silicon Nanocrystals In Colloidal Ensemble Revealed By Advanced Treatment Of Decay Kinetics

Preparation and Luminescence of Amorphous SiC Material and Its Optical Microcavity

Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

Room Temperature Visible Photoluminescence from Crystallized Nano-Si Thin Films

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Luminescent Silicon Carbide Nanocrystallites in 3C-Sic∕polystyrene Films

Photoluminescence of Femtosecond Laser-irradiated Silicon Carbide

Deposition Of Nanocrystalline Cubic Silicon Carbide Films Using The Hot-Filament Chemical-Vapor-Deposition Method

All amorphous SiC based luminescent microcavity