Abstract:The cubic phase SiC nanocrystals (3C-SiC NCs) have been extensively studied for electronics and photonics applications. In this work we study the electron transition pathways of photoluminescence (PL) from 3C-SiC NCs. It is found through measuring the steady-state, blinking and time-resolved PL spectra that surface passivation by glycerol improved the steady-state PL intensity (it does not modify the emission wavelength) and the NCs fluoresced more steadily. The PL decay lifetimes are shown to be the same when the detection wavelength is modified to scan the broad PL peak, implying that the broad PL peak is originated from the distribution of NCs' sizes. Furthermore, the PL decay lifetimes are not modified by the surface passivation. It is concluded that for PL, the electron is photoexcited from the ground state in the NC to a high-energy excited state, relaxes to the first excited state then radiatively recombines to the ground state to emit a photon. The photoexcited electron at the high-energy excited state could transit to the surface state, resulting in a reduced PL intensity and a decreased on-state dwell time in the blinking trajectory. The PL decay lifetime data implies that the two principal electron transition pathways of (a) high-energy excited state double right arrow the first excited state double right arrow the ground state, and (b) high-energy excited state double right arrow surface state double right arrow the ground state are independent from each other. We strongly believe that such a deep knowledge about 3C-SiC NCs will open new doors to harness them for novel applications.

Photoluminescence of Polycrystalline SiC Sintered from Graphite and Si Melt

Optimal temperature of crystallization and photoluminescence of SiC/Si (100) film prepared by pulsed ArF excimer laser deposition

Photoluminescence from Porous-Like Sic and Its Light-Induced Enhancement

Structure and Photoluminescence of Ge Nanoparticles Embedded in SiO2 Gel Glasses Fabricated at Different Temperatures

Ultraviolet-Light-Enhanced Luminescence in Sic Thin Films Grown on Si by Hot Filament Chemical Vapor Deposition and Ultraviolet-Light-Induced Luminescence in Anodized Sic

Intense Short-Wavelength Photoluminescence from Thermal Sio2 Films Co-Implanted with Si and C Ions

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Time-Resolved Photoluminescence Spectra Of Strong Visible Light-Emitting Sic Nanocrystalline Films On Si Deposited By Electron-Cyclotron-Resonance Chemical-Vapor Deposition

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Photoluminescence in SiCGe Thin Films Grown on 6H-Sic

Light Emission from Si Nanoclusters Formed at Low Temperatures

Synthesis and investigation of the physicochemical properties of polymorphic 3C–SiC

Origin of the Blue Photoluminescence from SiO2(SiC)∕SiC on Si Substrate

Electron Transition Pathways of Photoluminescence from 3C-Sic Nanocrystals Unraveled by Steady-State, Blinking and Time-Resolved Photoluminescence Measurements

Dependence of Photoluminescence Emission on Excitation Power and Temperature in Highly Doped 6H- SiC

Photoluminescence Characteristics from Amorphous Sic Thin Films with Various Structures Deposited at Low Temperature

Photoluminescence properties of Er doped into C-rich SiC nanoparticle films

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Photo- and electro-luminescence at 1.54 μm from Er3+ in SiC:Er2O3 films and structures

Photoluminescence Characterization of Beryllium-Implanted 6h–silicon Carbide

Intermediate Phase Silicon Structure Induced Enhancement of Photoluminescence from Thermal Annealed A-Si/Sio2 Multilayers