Abstract:Photoluminescence from β-SiC nanocrystals embedded in SiO2 films at room temperature has been studied. The β-SiC nanocrystals were formed by carbon implantation into Si substrate at 35 keV with various dose, followed by post-implantation annealing at 1200 °C for 30 min in Ar ambient. Thermal dry-oxidation of the annealed samples at 1050 °C for 3 h was performed to form β-SiC nanocrystals embedded in SiO2 films. The composition and chemical state of C and Si atoms were characterized by non-Rutherford backscattering spectrometry and Fourier transform infrared spectroscopy, respectively. FTIR results show that β-SiC nanocrystals were formed in SiO2 films, and the amount of β-SiC nanocrystals in SiO2 films increases with increasing of implanted dose. The photoluminescent properties of the samples were measured at room temperature with a Hitachi F4010 fluorescence spectrophotometer using a xenon lamp as an excitation source (300 nm). Two distinguishable PL bands located at around 460 and 535 nm were observed in all the samples. The PL intensity significantly depends the implanted dose, and there is a critical implanted dose of 2×1017 cm−2, at which the PL intensity reaches the largest value.

Luminescence from Si/SiO 2 with Si Implantation

Luminescence from Si/SiO 2 with Si implantation

Si-ion implantation-induced luminescence from Si single crystals with a SiO2 overlayer

Visible Luminescence Induced by Si-Ion Implantation into Si Single Crystals Covered with A Thin Sio2 Layer

Visible Photoluminescence Induced in Samples by Si Implantation

Luminescence band evolution in Si implanted SiO2 layer upon high temperature annealing

Photoluminescence from C+-Implanted Sinxoy Films Grown on Crystalline Silicon

Luminescence in Si/SiO2/Si structure formed by oxygen implantation

Optical Transmission and Photoluminescence of Silicon Nitride Thin Films Implanted with Si Ions

Photoluminescence from Β-Sic Nanocrystals Embedded in SiO2 Films Prepared by Ion Implantation

Annealing-induced Blue Shift in Luminescence Band from Si-implanted SiO2 Layer

Photoluminescence from Si-based SiN X O Y Films

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Evolution of Photoluminescence from Si Nanocrystals Embedded in a SiO2 Matrix Prepared by Reactive Pulsed Laser Deposition

Pseudo Nanocrystal Silicon Induced Luminescence Enhancement in A-Si /sio 2 Multilayers

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

1.5 Μm Luminescence of Silicon Nanowires Fabricated by Thermal Evaporation of SiO

Enhanced Visible Photoluminescence from Nc-Si/Siox Films Deposited by Electron Beam Evaporation

Effects of Defect, Carrier Concentration and Annealing Process on the Photoluminescence of Silicon Pn Diodes

Photoluminescence from silicon-based SiNxOy:C+ films

Pseudo nanocrystal silicon induced luminescence enhancement in a-Si /SiO2 multilayers