Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Structural properties of hydrogenated amorphous silicon carbide alloys

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Red–green–blue Light Emission from Hydrogenated Amorphous Silicon Carbide Films Prepared by Using Organic Compound Xylene As Carbon Source

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

Photoluminescence of Amorphous Si Films Prepared by AtmosphericPressure Chemical Vapor Deposition

Blue Light Emission from Hydrogenated Amorphous Silicon Carbide Prepared by Xylene Source in Plasma-Enhanced Chemical Vapour Deposition System

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Surface Plasmon Enhanced Blue–green Photoluminescence from Carbon-Rich Amorphous Silicon Carbide Films

Visible Electroluminescence from Amorphous Hydrogenated Silicon Carbide Prepared by Using Organic Carbon Source

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Photoluminescence Characteristics from Amorphous Sic Thin Films with Various Structures Deposited at Low Temperature

Blue Light Emission From Hydrogenated Amorphous Silicon Carbide Produced By Organic Source

Full Color Light Emission from Amorphous SiCx:H with Organic–inorganic Structures

Microstructure and photoluminescence properties of as-deposited and annealed Si-rich a-Si1−xCx:H films

Highly luminescent hydrogenated amorphous carbon (a-C:H) thin films