Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Structural properties of hydrogenated amorphous silicon carbide alloys

Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Structure and Luminescence Properties of an Amorphous Hydrogenated Carbon

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Photoluminescence Behavior Of Hydrogenated Amorphous Carbon

Photoluminescence in Hydrogenated Amorphous Carbon

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Resonant Raman Scattering in Hydrogenated Amorphous Silicon Films

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Photoluminescence Characteristics from Amorphous Sic Thin Films with Various Structures Deposited at Low Temperature

Study of Optical Nonlinearity in Hydrogenated Amorphous Silicon Carbide Films

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Structural and band tail state photoluminescence properties of amorphous SiC films with different amounts of carbon

Optical And Electrical Properties Of A-Si(1-X)Cx : H And Mu C-Si1-Xcx : H Films Prepared By Using Methane And Xylene Source

Visible Electroluminescence from Amorphous Hydrogenated Silicon Carbide Prepared by Using Organic Carbon Source

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions