Abstract:Photoluminescence (PL) is one of the key experimental characterizations of optoelectronic materials, including conjugated polymers (CPs). In this study, a simplified model of an undoped cis-polyacetylene (cis-PA) oligomer was selected and used to explain the mechanism of photoluminescence (PL) of the CPs. Using a combination of the ab initio electronic structure and a time-dependent density matrix methodology, the photo-induced time-dependent excited state dynamics were computed. We explored the phonon-induced relaxation of the photoexcited state for a single oligomer of cis-PA. Here, the dissipative Redfield equation of the motion was used to compute the dissipative excited state dynamics of electronic degrees of freedom. This equation used the nonadiabatic couplings as parameters. The computed excited state dynamics showed that the relaxation rate of the electron is faster than the relaxation rate of the hole. The dissipative excited-state dynamics were combined with radiative recombination channels to predict the PL spectrum. The simulated results showed that the absorption and emission spectra both have a similar transition. The main result is that the computed PL spectrum demonstrates two mechanisms of light emission originating from (i) the inter-band transitions, corresponding to the same range of transition energies as the absorption spectrum and (ii) intra-band transitions not available in the absorption spectra. However, the dissipative Redfield equation of the motion was used to compute the electronic degrees of freedom of the nonadiabatic couplings, which helped to process the time propagation of the excited dynamic state. This excited dynamic state shows that the relaxation rate of the electron is faster than the relaxation rate of the hole, which can be used for improving organic semiconductor materials for photovoltaic and LED applications.

Photoluminescence in Hydrogenated Amorphous Carbon

Photoluminescence Behavior Of Hydrogenated Amorphous Carbon

Structure and Luminescence Properties of an Amorphous Hydrogenated Carbon

Polarization Memory of Photoluminescence in Amorphous Carbon

Highly luminescent hydrogenated amorphous carbon (a-C:H) thin films

Raman And Photoluminescence Properties Of Hydrogenated Amorphous Silicon Carbide Alloys With Low Carbide Concentration

The change of photoluminescence characteristics of amorphous carbon films due to hydrogen dilution

Preparation of Amorphous Carbon Films by Layer-By-Layerhydrogen Plasma Annealing Method and Their Luminescence Properties

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Superlattice Structures Based on Amorphous Carbon

Electron Field Emission Studies from Amorphous Carbon Thin Films

Novel photoluminescence from hydrogenated amorphous carbon films prepared by using xylene source

Green and Blue Light Emitting from Hydrogenated Amorphous Carbon Films Diluted by Hydrogen

Bright Blue Photoluminescence from the Amorphous Carbon Via Surface Plasmon Enhancement

Microstructures and Photoluminescence of Hydrogenated Amorphous Carbon Films Produced by Using Organic Hydrocarbon Source

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Photoemission Study of Amorphous Carbon Modifications and Comparison with Calculated Densities of States

Structural properties of hydrogenated amorphous silicon carbide alloys

Novel Luminescence Properties of A-C:H Films Produced by Using an Organic Source at Various Substrate Temperatures

Photoluminescence of Cis-Polyacetylene Semiconductor Material

Defect Induced Photoluminescence from Dark Excitonic States in Individual Single-Walled Carbon Nanotubes