Electron Field Emission Studies from Amorphous Carbon Thin Films

SRP Silva,RD Forrest,DA Munindradasa,GAJ Amaratunga
DOI: https://doi.org/10.1016/s0925-9635(97)00292-6
IF: 3.806
1998-01-01
Diamond and Related Materials
Abstract:One of the largest potential applications for amorphous carbon (a-C) thin films is in electron field emitting devices. We have deposited hydrogenated a-C (a-C:H) thin films on silicon substrates as a function of self-bias and pressure using a standard capacitively coupled RF PECVD system. Emission of electrons is observed at threshold fields as low as 6 V μm−1 after conditioning. The threshold field at which the electron emission takes place does not seem to vary in a systematic manner as a function of self-bias but shows a minimum threshold for the a-C:H film with the highest sp3 content. We have explained the electron emission that occurs in these films as being due to a space charge effects caused by band bending in the films, with the a-C:H film acting as a space charge interlayer with the true cathode being the silicon. We have also conducted lifetime tests. Following our previous work on nitrogen-doped a-C:H films [1], we report the characteristics observed for undoped a-C films.
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