Abstract:The microstructural properties of nitrogenated hydrogenated amorphous carbon (a-C:H:N) thin films deposited using a chemical vapour deposition system are analysed in order to evaluate their impact on the opto-electronic properties. Electron energy loss spectroscopy is used to reconstruct a joint density of states (JDOS) for the a:C:H:N films and thus used to examine the microstructure, Information obtained from optical absorption is then used to confirm the JDOS. Using this JDOS we attempt to predict the variation expected in the electronic conduction as a function of nitrogen content. The electrical data obtained for the a:C:H:N thin films appear to be bulk controlled as opposed to metal contact dominated for films that an deposited on the driven electrode and are more diamond-like in character. The bulk electronic properties at high fields an fitted to different types of conduction behaviour in order to obtain the best tits to the data, From this study it is observed that a Poole-Frenkel type fit is best for films chat have a diamond-like structure, For the films that have a polymeric structure which are deposited on the earthed electrode the conductivities are very much lower, and consistent with the lower defect densities observed in the microstructural study, It is possible that the conduction in these films are Schottky barrier controlled, (C) 1998 Elsevier Science S.A, All rights reserved.

Nitrogenated Amorphous Carbon As a Semiconductor

Nitrogen Modification of Hydrogenated Amorphous Carbon Films

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Substitutional Nitrogen Doping of Tetrahedral Amorphous Carbon

Electron Field Emission Studies from Amorphous Carbon Thin Films

Hydrogen-Free Amorphous-Carbon Preparation and Properties

The Stability of Nitrogen-Containing Amorphous Carbon Films after Annealing at Moderate Temperatures

Self-texturing of nitrogenated amorphous carbon thin films for electron field emission

Nmr Spin Lattice Relaxation in Nitrogen-Doped 6h Silicon Carbide

Electron Field Emission from Diamond-Like Carbon

Optical & Electronic Properties of Carbon Nitride Thin Films

The Structure of Boron-, Phosphorus- and Nitrogen-Doped Tetrahedral Amorphous Carbon Deposited by Cathodic Arc

Electron energy loss spectroscopy of amorphous carbon nitride

Electronic and optical applications of diamond-like carbon

A Field Emission Study of the Critical Parameters of Amorphous Carbon Films Deposited on a Variety of Carbonaceous Substrates

Structure and Luminescence Properties of an Amorphous Hydrogenated Carbon

Doping Of Highly Tetrahedral Amorphous-Carbon

C3N—A 2D Crystalline, Hole‐Free, Tunable‐Narrow‐Bandgap Semiconductor with Ferromagnetic Properties

Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films Containing Nanotube Regions