Abstract:N-type hydrogenated nanocrystalline silicon (nc-Si:H) films were deposited by the plasma-enhanced chemical vapour deposition (PECVD) technique on p+-type crystal silicon (c-Si) substrates; then a kind of heterojunction structure of (n)nc-Si:H/(p+)c-Si was obtained. Both negative resistance in forward current–voltage (I–V) measurements and current staircases in reverse I–V experimental curves were observed from this heterojunction of (n)nc-Si:H/(p+)c-Si at 77 K. It was verified by the electrical experiments that this structure is a semiconductor heterojunction tunnelling diode. The forward current was considered to be dominated by interband tunnelling, excess and thermionic emission component. Within the reverse bias ranging from around 0 to −13 V, the reverse leakage current can be attributed to minority carriers instead of majority carriers tunnelling across the depletion layer of the heterojunction. By increasing the reverse applied voltage from about −13 V to −37 V, the reverse current can be ascribed to the injection of electrons via sequent resonant tunnelling through the Si nanocrystals quantum dots into the substrate. By further increasing the reverse bias, the reverse current can be assigned to carrier avalanche multiplication within the amorphous buffer layer in the depletion region to enhance the electron resonant tunnelling in the nc-Si:H layer. The results indicate that the (n)nc-Si:H/(p+)c-Si structure is a promising candidate for digital circuit applications.

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Electronic Behaviour and Field Emission of A-C:H:n/si Heterojunctions

Electron Field Emission Studies from Amorphous Carbon Thin Films

Field Emission from As Grown and Nitrogen Incorporated Tetrahedral Amorphous Carbon/Silicon Heterojunctions Grown Using A Pulsed Filtered Cathodic Vacuum Arc Technique

Nitrogenated Amorphous Carbon As a Semiconductor

Nitrogen Containing Hydrogenated Amorphous Carbon for Thin-Film Field Emission Cathodes

Influence of the Heterojunction on the Field Emission from Tetrahedral Amorphous Carbon on Si

Field emission from a-C:H and a-C:H:N

Tetrahedral Amorphous Carbon-Silicon Heterojunction Band Energy Offsets

The microstructural dependence of the opto-electronic properties of nitrogenated hydrogenated amorphous carbon thin films

Carbon - Silicon Heterojunction Diodes Formed by CH4/ Ar Rf Plasma Thin Film Deposition on Si Substrates

Amorphous Diamond-Si Semiconductor Heterojunctions

Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction

Abnormal Current–voltage Characteristics and Metal–insulator Transition of Amorphous Carbon Film/silicon Heterojunction

Field Emission Properties of Nanocomposite Carbon Nitride Films

Carrier Conduction in Heterojunction of Hydrogenated Nanocrystalline Silicon with Crystal Silicon

Properties of N-Type Tetrahedral Amorphous Carbon (Ta-C)/p-type Crystalline Silicon Heterojunction Diodes

Electron Field Emission from Diamond-Like Carbon

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon

Electrical characterization of N-type nanocrystalline silicon on p-type crystalline silicon (nc-Si:H/c-Si) heterojunctions

Field Emission from Amorphous Carbon Nitride Films Deposited on Silicon Tip Arrays