Abstract:Highly tetrahedral amorphous carbon (ta-C) films and its hydrogenated form (ta-C:H) have been deposited using a filtered cathodic are. In this paper, the optical and electronic band-gaps of amorphous diamond and its hydrogenated form ta-C:H, are shown to be in the range 2 eV. The H content of ta-C: H is found to be about 3 at.% using elastic recoil detection analysis (ERDA) and electron energy loss spectroscopy (EELS) is used to show that ta-C:H does keep its tetrahedral structure. Both materials are found to be stable at temperatures up to 1000K. The room temperature conductivity of 10(-7)10(-8)Omega(-1)cm(-1) is shown to be thermally activated, with activation energies in the range 0.2-0.3 eV. A detailed study made from the current-voltage characteristics of ta-Clp-Si heterojunctions shows that current flow is space-charge limited (SCLC) and influenced by bulk traps. The density of states profile, N(E), in the region of the quasi-Fermi level is calculated using the differential method and found to be of the order 10(18) cm(-3) eV(-1). Optical absorption data is coupled with the electrical results to confirm that the valence band density of states is of the order 10(21) cm(-3) eV(-1). It is also shown that there is a reduction of nearly one order of magnitude in the N(E) at the quasi-Fermi level upon hydrogenation. SCLC measurements are complemented with surface admittance measurements (SAM) which yield a value of 10(11) cm(-2) eV(-1) for the interfacial density of states at the ta-C/p-Si junction. A decrease in N-ss is also observed at the ta-C:H/p-Si interface in agreement with the SCLC results.

Properties of N-Type Tetrahedral Amorphous Carbon (Ta-C)/p-type Crystalline Silicon Heterojunction Diodes

Photoresponse Characteristics of N-Type Tetrahedral Amorphous-Carbon P-Type Si Heterojunction Diodes

Tetrahedral Amorphous-Carbon Properties and Applications

Tetrahedral Amorphous Carbon-Silicon Heterojunction Band Energy Offsets

Heterojunction Diodes Formed Using Thin-Film-C Containing Polycrystalline Diamond and Si

Electronic density of states in highly tetrahedral amorphous carbon

Electrical Characterization of N-nanocrystalline/P-crystalline Silicon Heterojunctions

Influence of the Heterojunction on the Field Emission from Tetrahedral Amorphous Carbon on Si

Tunnelling in Heterojunction of N-Type Hydrogenated Nanocrystalline Silicon Film with P+-Type Crystal Silicon

Electronic behaviour and field emission of a-C:H:N/Si heterojunctions

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films Containing Nanotube Regions

Electrical characterization of N-type nanocrystalline silicon on p-type crystalline silicon (nc-Si:H/c-Si) heterojunctions

Amorphous Diamond-Si Semiconductor Heterojunctions

A Study of Electrical Properties on Nc-Si/c-si Heterojunction Diodes

N-Type Doping of Highly Tetrahedral Diamond-Like Amorphous Carbon

Variable capacitance diodes of (p)nc-Si:H/(n)c-Si heterojunction

Carbon - Silicon Heterojunction Diodes Formed by CH4/ Ar Rf Plasma Thin Film Deposition on Si Substrates

Single-crystalline GaAs/Si Heterojunction Tunnel Diodes Interfaced by an Ultrathin Oxygen-enriched Layer

Heterojunction Photovoltaic Devices Utilizing Single Wall Carbon Nanotube Thin Films and Silicon Substrates