Abstract:Highly tetrahedral amorphous carbon (ta-C) films and its hydrogenated form (ta-C:H) have been deposited using a filtered cathodic are. In this paper, the optical and electronic band-gaps of amorphous diamond and its hydrogenated form ta-C:H, are shown to be in the range 2 eV. The H content of ta-C: H is found to be about 3 at.% using elastic recoil detection analysis (ERDA) and electron energy loss spectroscopy (EELS) is used to show that ta-C:H does keep its tetrahedral structure. Both materials are found to be stable at temperatures up to 1000K. The room temperature conductivity of 10(-7)10(-8)Omega(-1)cm(-1) is shown to be thermally activated, with activation energies in the range 0.2-0.3 eV. A detailed study made from the current-voltage characteristics of ta-Clp-Si heterojunctions shows that current flow is space-charge limited (SCLC) and influenced by bulk traps. The density of states profile, N(E), in the region of the quasi-Fermi level is calculated using the differential method and found to be of the order 10(18) cm(-3) eV(-1). Optical absorption data is coupled with the electrical results to confirm that the valence band density of states is of the order 10(21) cm(-3) eV(-1). It is also shown that there is a reduction of nearly one order of magnitude in the N(E) at the quasi-Fermi level upon hydrogenation. SCLC measurements are complemented with surface admittance measurements (SAM) which yield a value of 10(11) cm(-2) eV(-1) for the interfacial density of states at the ta-C/p-Si junction. A decrease in N-ss is also observed at the ta-C:H/p-Si interface in agreement with the SCLC results.

Tetrahedral Amorphous-Carbon Properties and Applications

Electronic density of states in highly tetrahedral amorphous carbon

Photoconductivity in Highly Tetrahedral Diamondlike Amorphous Carbon

Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films Containing Nanotube Regions

Gap States, Doping And Bonding In Tetrahedral Amorphous-Carbon

Influence of Ion Energy and Substrate Temperature on the Optical and Electronic Properties of Tetrahedral Amorphous Carbon (Ta-C) Films

Properties of Tetrahedral Amorphous Carbon Prepared by Vacuum Arc Deposition

N-Type Doping of Highly Tetrahedral Diamond-Like Amorphous Carbon

Properties of N-Type Tetrahedral Amorphous Carbon (Ta-C)/p-type Crystalline Silicon Heterojunction Diodes

Calculation of the Bandgap and of the Type of Interband Transitions in Tetrahedral Amorphous Carbon Using Electron Energy Loss Spectroscopy

Doping Of Highly Tetrahedral Amorphous-Carbon

Hydrogen-Free Amorphous-Carbon Preparation and Properties

Cross-Sectional Structure Of Tetrahedral Amorphous Carbon Thin Films

Photoresponse Characteristics of N-Type Tetrahedral Amorphous-Carbon P-Type Si Heterojunction Diodes

Electronic and optical applications of diamond-like carbon

The Electronic Band -Gap of Polycrystalline Diamond and Tetrahedral Amorphous Carbon by EELS in a STEM.

Tetrahedral Amorphous Carbon-Silicon Heterojunction Band Energy Offsets

Structural Characteristics and Electrode Activities of Phosphorus Incorporated Tetrahedral Amorphous Carbon Films

Evolution of Sp2 Bonding with Deposition Temperature in Tetrahedral Amorphous Carbon Studied by Raman Spectroscopy

First-principles molecular dynamics simulations for the properties of boron-doped tetrahedral amorphous carbon

Strongly Adhering and Thick Highly Tetrahedral Amorphous Carbon (ta–c) Thin Films Via Surface Modification by Implantation