Calculation of the Bandgap and of the Type of Interband Transitions in Tetrahedral Amorphous Carbon Using Electron Energy Loss Spectroscopy

I Alexandrou,AJ Papworth,C Kiely,GAJ Amaratunga,LM Brown

DOI: https://doi.org/10.1016/j.diamond.2003.11.050

IF: 3.806

2004-01-01

Diamond and Related Materials

Abstract:A fundamental understanding of the electronic properties of materials and their potential for application in new devices requires detailed knowledge of their electronic structure. Electron energy loss spectra can provide a continuous measurement of collective electron plasma oscillations and single electron excitations in the energy range 0.3–100 eV. In contrast to conventional optical spectroscopy, which has an intrinsic upper information limit of approximately 6 eV due to absorption of light from the optical components, electron energy loss spectroscopy (EELS) offers electronic excitation data over an energy range sufficient for accurate application of Kramers–Kronig calculations. In addition, the incident electron probe offers an extremely high spatial resolution. Furthermore, the incident fast electrons can transfer both energy and momentum to the valence electrons to trigger both direct and indirect band electronic transitions. In this paper, we have calculated the electronic properties of tetrahedral amorphous carbon (ta-C). The imaginary part of the dielectric function, ε2, experimentally derived from the EELS data has been used to calculate the energy dependence of the M2ρ product, where M is the matrix element and ρ is the joint density of states (JDOS). The shape of the M2ρ curve has been used to calculate the bandgap value and the type of transition (direct or indirect). Using ta-C as an example, the ability to calculate the semiconducting properties of materials at the nanoscale is demonstrated.