Abstract:Amorphous hydrogenated silicon carbonitride (a-SiCN:H) thin films were grown using electron cyclotron resonance chemical vapour deposition using a mixture of methane, nitrogen, and silane as precursors. The origin of the variation of macroscopic properties such as hardness (H), elastic modulus (E), photoluminescence (PL), and the optical band gap was investigated through their correlation with the microscopic features of a-SiCN:H thin films as a function of the process parameters, including the deposition temperature and methane gas flow rate. From a microstructural perspective, the thin films were investigated using x-ray photoelectron spectroscopy, Rutherford backscattering spectrometry, elastic recoil detection, transmission electron microscopy, and x-ray diffraction. It is verified that an increase of the substrate temperature resulted in the substitution of hydrogen atoms mainly by carbon atoms, causing the density of the silicon carbide-related structures to increase in the amorphous structure of the a-SiCN:H thin films. Hardness and elastic modulus were found to increase with the deposition temperature and decreased with an increase of the methane gas flow during the deposition, resulting in higher carbon content in the films. The observed changes are ascribed to the reduced density of the weak hydrogen terminated bonds and the variation of the relative bond density of Si-C to Si-N bonds. In addition, the thin films were depth profiled using a slow positron beam to investigate the role of vacancies. The observed increase of the positronium formation with increasing deposition temperature was found to correlate with the variation of PL, where an enhancement of the visible emission originating from carbon-related defects was observed. A set of optimized process parameters to fabricate a-SiCN:H thin films with improved visible emission and hardness properties is suggested.

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Properties of plasma-deposited amorphous SiO2 films

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Multiphase Structure of Hydrogenated Amorphous Silicon Carbide Thin Films

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Structural properties of hydrogenated amorphous silicon carbide alloys

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Raman and Photoluminescence Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

High temperature annealing of hydrogenated amorphous silicon carbide thin films

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Characterization of Hydrogenated Amorphous Silicon Carbide Alloys with Low Carbon Concentrations

Structure and Luminescence Properties of an Amorphous Hydrogenated Carbon

Process-dependent mechanical and optical properties of nanostructured silicon carbonitride thin films