Abstract:The Si–C–H thin films were deposited at 300°C by plasma enhanced chemical vapor deposition (PECVD) and around 600°C by pyrolysis CVD, in which C2H4 and SiH4 were used as the resource gases and hydrogen as the carrying vehicle. The formation of micro-crystals in the Si–C–H films was investigated by TEM, IR spectroscopy and electrical resistivity measurements. The results show that many silicon nano-crystalline particles are embedded and distributed uniformly in the amorphous matrix of the Si–C–H thin film. A higher content of C2H4 results in a lower crystallinity of the film deposited both by PECVD and pyrolysis CVD. The crystal grows more easily in the film deposited with C2H4–SiH4 at high temperature around 600°C by pyrolysis CVD than that deposited at 300°C by PECVD. The resistivity of the film by pyrolysis CVD at high deposition temperature is about five orders of magnitude lower than that by PECVD at low deposition temperature. The SiC crystalline phase trends to form quite possibly in the Si–C–H thin film deposited at 630°C by pyrolysis CVD. The expressions of the crystallinity and resistivity as functions of the content of C2H4 are theoretically deduced. The theoretical curves are showed to be very coincident with the experimental results in the Si–C–H thin film. The crystallinity of the film rests mainly with the nucleation rate of silicon phase that is dependent on the content of C2H4 in deposition source gases. The resistivity behavior of Si–C–H thin film matches with the parallel model of the two phase events, where the contribution of crystalline phase is appropriate to the contact probability among the silicon crystals and compatible with homogeneous distribution of the particles embedded in matrix.

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Properties of plasma-deposited amorphous SiO2 films

Thermochemical process occurring in PLD-derived SiC films during vacuum annealing

EPITAXIAL GROWTH OF (0001)ORIENTED 6H-Sic FILMS ON Si(111) SUBSTRATE BY ORGANIC SOL-GEL FILM ANNEALING

Growth of Crystalline SiC Film Free of Cavities by Heating PS/silica Sol-Gel Coatings on Si (111) Substrate

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Preparation of Si–C–H thin films embedded with high oriented (100) polycrystalline silicon

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

High temperature annealing of hydrogenated amorphous silicon carbide thin films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Growth of SiC Thin Films on (100) and (111) Silicon by Pulsed Laser Deposition Combined with a Vacuum Annealing Process

Effects of Carbon Additions on Crystallinity and Resistivity in Si–C–H Thin Films Deposited by CVDs

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Study on PECVD process and characteristics of SiCxNy:H film

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition