Abstract:Carbon-rich hydrogenated amorphous silicon carbide (a-Si(1-x)C(x):H) films were deposited by plasma enhanced chemical vapor deposition (PECVD) using silane, ethylene and hydrogen as gas sources. The effect of relatively low hydrogen dilution on the properties of as-deposited samples was investigated. A variety of techniques including Scanning Electron Microscope (SEM), Fourier transform infrared spectroscopy (FTIR), Raman scattering (RS), UV-VIS spectrophotometer and photoluminescence (PL) spectroscopy were used to characterize the grown films. The deposition rate decreases with hydrogen dilution. The silicon to carbon ratio increases slightly with the addition of hydrogen. The phenomenon can be attributed to the dissipation of power density caused by hydrogen dilution. Raman G peak position shifting to a lower wave number indicates that hydrogen dilution reduces the size and concentration of sp(2) carbon clusters, which is caused by the etching effect by atomic hydrogen. The optical band gap, which is controlled by the sp(2) carbon clusters and Si/C ratio, changes unmonotonously. The as-deposited samples exhibited a blue-green room-temperature (RT) PL well visible to the naked eye with UV excitation. The PL band can be attributed to the radiative recombination of electron-hole pairs within small sp(2) clusters containing C=C and C-H units in a sp(3) amorphous matrix.

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

A Study of PECVD Amorphous SiO2 Films Using Infrared Absorption Techniques

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

Structural and optical properties of α-Si1-xCx:H thin films prepared by RF-PECVD

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

Study on PECVD process and characteristics of SiCxNy:H film

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

Preparation of Si–C–H thin films embedded with high oriented (100) polycrystalline silicon

Investigation of PECVD SiC nano film

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Characteristic Study of Silicon Nitride Films Deposited by LPCVD and PECVD

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Research on Nitride Membranes Grown by PECVD

Processing and Characterisation of PECVD Silicon Nitride Films

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma