Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Amorphous SiCx:H and SiCxNy:H Films Obtained from Hexamethyldisilane Vapor in Inductively Coupled RF Discharge Plasma

SiCx:H and SiCxNy:H Amorphous Films Prepared from Hexamethyldisilane Vapors

Plasma-Enhanced Vapor Deposition Amorphous SiOx∶H(0≤x≤2.0)Films by Infrared Absorption Spectroscopy

Properties of plasma-deposited amorphous SiO2 films

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Plasma Enhanced Chemical Vapor Deposition and Characterization of Hydrogenated Amorphous SiC Films on Si

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Structure and Properties of Hydrogenated Amorphous Silicon Carbide Thin Films Deposited by Pecvd

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Structure Of Nc-Si : H Films

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

Characteristics of SiC_x: H and SiN_x Cy:H Thin Films Deposited by PECVD

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma