Abstract:In this work we report on the deposition of hydrogenated nanocrystalline silicon carbide (nc-SiC:H) films using an electron cyclotron resonance chemical vapor deposition (ECR-CVD) system with silane (SiH4) and methane (CH4) as source gases. It was found that the conditions of strong hydrogen dilution and high microwave power are necessary for the fabrication of nanocrystalline SiC grains, which are found to be embedded in an amorphous matrix. The films have been studied using high resolution transmission electron microscopy, infrared absorption, Raman scattering and x-ray photoelectron spectroscopy. All the results have confirmed the prescence of SiC nanocrystallites. Very strong photoluminescence (PL) could be observed from these films at room temperature, with a peak energy of 2.64 eV. This energy, being higher than the optical bandgap of 3C-SiC, can be possibly due to quantum size effect in these crystals, which are embedded in an amorphous matrix of larger bandgap. Time-resolved PL at the peak emission energy exhibits a bi-exponential decay process with lifetimes that are in the order of picoseconds and nanoseconds, which are at least 2 orders of magnitude faster than that of bound excition transitions in bulk 3C-SiC at low temperature. The strong light emission and short PL lifetimes observed strongly suggest that the radiative recombination is a result of direct optical transitions in the SiC nanocrystallites. It was found that upon ultraviolet irradiation using an Ar + laser (351 nm), the PL intensity of the films was enhanced. After 20 minutes of irradiation, the PL intensity increased by about three times. This result suggests that the UV light may lead to modification of nonradiative recombination centers in the films.

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

The Effect of Relatively Low Hydrogen Dilution on the Properties of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Structure Of Nc-Si : H Films

Effect Of Nitrogen And Hydrogen On The Crystallization Of Nanocrystalline Silicon Nitrogen Films

Influence of C_2H_4 on the Properties of Amorphous Silicon Film Grown by Chemical Vapor Deposition

Blue-green luminescence and SERS study of carbon-rich hydrogenated amorphous silicon carbide films with multiphase structure

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Influence of the partial pressure of ethene on the crystallinity of 3C-SiC films grown on Si(111) by chemical vapor deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Study on structural properties of nanocrystalline silicon films

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

The influence of the growth conditions on the structural and optical properties of hydrogenated amorphous silicon carbide thin films

Synthesis of nanostructured SiC films by plasma enhanced chemical vapor deposition with hydrogen diluted hexalmethyldisiloxane as precursor

Investigation of nanocrystallization of a-Si1 - XGe x:H thin films diluted with argon in the PECVD system

DEPOSITION OF HYDROGENATED NANOCRYSTALLINE SILICON CARBIDE BY ECR-CVD

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H