INCORPORATION EFFECT OF NITROGEN INTO Nc-Sin_x:H FILMS

Han Weiqiang,Han Gao-rong,Nie Donglin,Beijing
1996-01-01
Abstract:Undoped nanocrystalline silicon nitrogen(nc-SiNx:H)films were prepared by rf glow discharge of heavily hydrogen(H2)diluted silane(SiH4) and nitrogen (N2).The volume fraction of the crystalline phase and mean grains size were varied from 58%-14% and 10nm-5um respectively when the gas volume ratio of N2 / SiH4 is increased from 1 to 4,connected with the N / St content ratio increasing from 0.03 to 0. 12 (the substrate temperature 320℃ and the rf power 70W).When the gas volume ratio of N2/ SiH4 is larger than 5,the deposited films are amorphous.The dark conductivity varied from 10 ̄(-5) to 10 ̄(-11)(Ω cm) ̄(-1)of nc-SiNx:H films are of percolation behaviour, which is strongly connected with the degree of crystallization.
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