Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

He Haiyan,Gao Qian,Zhang Xiwen,Han Gaorong
DOI: https://doi.org/10.1016/j.tsf.2011.01.124
IF: 2.1
2011-01-01
Thin Solid Films
Abstract:Amorphous hydrogenated silicon films were deposited on glass substrates at room temperature. This cold deposition process was operated in a dielectric barrier discharge CVD reactor with a fixed strip-shaped plasma matched with a moving substrate holder. The maximum film area was 300×600mm2. The film deposition rate as a function of applied peak voltage of DBD power was investigated under different hydrogen-diluted silane concentrations, and the film surface smoothness, continuity, and film/glass adherence were also studied. The maximum deposition rate was 12.2Å/s, which was performed under the applied peak voltage of 16kV and a hydrogen-diluted silane concentration of 50%. IR measurements reveal that the silane concentration plays a key role in determining the hydrogen-silicon bonding configurations. With increasing hydrogen-diluted silane concentration, the H–Si bonding configurations shift gradually from Si–H3 to Si–H. The variation of photo/dark conductivity ratio and optical bandgap versus hydrogen-diluted silane concentration were investigated. The use of DBD-CVD for deposition of a-Si:H films offers certain advantages, such as colder substrate, faster film growth rate, and larger deposition area. However, the consumption of silane for the DBD-PECVD procedure is much greater than for the RF-PECVD process.
What problem does this paper attempt to address?