Abstract:Low temperature oxide formation is an important process in the fabrication of thin-film transistors (TFT) used in active-matrix liquid crystal displays. However, low temperature oxide is prone to have defects at the SiO2/polycrystalline–SiGe interfaces. We have recently developed a novel rf (radio frequency) plasma oxidation method for polycrystalline SiGe (poly-SiGe) materials. The poly-SiGe wafers are oxidized in an oxygen rf plasma with the samples electrically floating. That is, the sample voltage is the same as the sheath potential of the floating wall and is always negative with respect to the bulk of the plasma since electrons have higher mobility than ions. The slightly negative potential on the wafers attracts low energy oxygen ions from the plasma and the resulting damage on the wafers is thus lower than that induced by the more commonly used and energetic electron cyclotron resonance (ECR) source. No deliberate heating is applied during oxidation since the samples are heated spontaneously by the plasma, but the temperature is measured to be below 100 °C throughout the entire process. The oxidation rate is comparable to that of ECR plasma oxidation. Depth profiles are acquired by Auger electron spectroscopy and the interfaces are examined by x-ray photoelectron spectroscopy. The n-channel metal oxide silicon device fabricated on the as-grown gate oxide shows good electrical characteristics. The process is thus compatible with inexpensive large-area, low-temperature fabrication of TFTs on glass substrates.

Deposition of Very-Low-Hydrogen-Containing Silicon at a Low Temperature Using Very-High-Frequency (162 MHz) SiH4 Plasma

Thickness Dependence of Properties of Plasma-Deposited Amorphous SiO2 Films

Hydrogen-plasma-induced Rapid, Low-Temperature Crystallization of Μm-Thick A-Si:H Films

Floating Low-Temperature Radio-Frequency Plasma Oxidation of Polycrystalline Silicon-Germanium

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Low-temperature deposition of µc-Si : H thin films by a low-frequency inductively coupled plasma for photovoltaic applications

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Confined high-pressure chemical deposition of hydrogenated amorphous silicon

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Room Temperature Growth of Hydrogenated Amorphous Silicon Films by Dielectric Barrier Discharge Enhanced Cvd

High-Rate Deposition of Hydrogenated Amorphous-Silicon Using Microwave Plasma Chemical Vapor-Deposition Process

Rapid And Controllable A-Si:H-To-Nc-Si:H Transition Induced By A High-Density Plasma Route

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

Plasma-enhanced chemical vapor deposition of amorphous Si on graphene

Fabrication of Columnar Silicon Thin Film at Low Temperature by Improved RTP

Deposition of a-Si:H thin films embedded with nano-crystalline through dilution of argon

Room-temperature deposition of low H-content SiNx/SiNxOy thin films using a specially designed PECVD system

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

High Rate Deposition Of Nanocrystalline Silicon By Thermal Plasma Enhanced Cvd

Effectiveness of plasma diagnostic in ultra high frequency and radio frequency hybrid plasmas for synthesis of silicon nitride film at low temperature

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films