Abstract:The optical emission spectrometer (OES) is an effective experimental tool for monitoring plasma states and the composition of gases during the growth of silicon thin films by plasma-enhanced chemical vapor deposition. In this paper, hydrogenated amorphous silicon (a-Si) (a-Si:H) and microcrystalline silicon $(\mu\hbox{c-Si})$ thin films have been deposited in a parallel-plate radio frequency (RF) plasma reactor using silane and hydrogen gas mixtures. The plasma emission atmosphere was recorded using an OES system during the growth of the Si thin films. The plasma was simultaneously analyzed during the process using an OES method to study the correlation between growth rate and microstructure of the films. In the deposition, the emitted species $(\hbox{SiH}^{\ast}, \hbox{Si}^{\ast},\ \hbox{and}\ \hbox{H}^{\ast})$ were analyzed. The OES analysis supported a chemisorption-based deposition model of the growth mechanism. The effects of RF power, electron-to-substrate distance, and ${}\hbox{H}_{2}$ dilution of the emission intensities of excited SiH, Si, and H on the growth rate and microstructures of the film were studied. Finally, single-junction a-Si:H and ${}\mu\hbox{c-Si}$ solar cells were obtained with initial aperture area efficiencies of 9.71% and 6.36%, respectively. A tandem a-Si/${}\mu\hbox{c-Si}$ cell was also realized with an efficiency of 12.3%.

Low Temperature and High Deposition Rate Fabricating A-Si:H Thin Films and Solar Cells

Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells

Development of Highly Stable Hydrogenated Amorphous Silicon Films for Application in Solar Cells

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Fabrication and Research of SiO_x :H Thin Film As an Interlayer in Amorphous/microcrys-Talline Silicon Solar Cells

Deposition and Characterization of High-Efficiency Silicon Thin-Film Solar Cells by HF-PECVD and OES Technology

Key Issues for High-Efficiency Silicon Thin Film Solar Cells Prepared by RF-PECVD under High-Pressure-depletion Conditions

High Efficiency Dopant Free A-Si:H Solar Cell

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

High-Pressure Water-Vapor Annealing for Enhancement of A-Si:H Film Passivation of Silicon Surface

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

Flexible, Dopant Free A-Si:H Solar Cell

Amorphous silicon thin‐film solar cells deposited on flexible substrates using different zinc oxide layers

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

Highly Doped P-Type Nanocrystalline Silicon Thin Films Fabricated by Low-Frequency Inductively Coupled Plasma Without H-2 Dilution

Low-cost Fabrication of Cu 2 ZnSnS 4 Thin Films for Solar Cell Absorber Layers

Research on the optimum hydrogenated silicon thin films for application in solar cells

Fabrication of Microcrystalline Silicon Materials and Microcrystalline Silicon Solar Cells and Study on Their Properties

Cold Deposition of Large-Area Amorphous Hydrogenated Silicon Films by Dielectric Barrier Discharge Chemical Vapor Deposition

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate