Abstract:A series of high rate growth μc-Si:H thin films with different thicknesses were deposited by very high frequency plasma enhanced chemical vapor deposition （VHF-PECVD） process with high power and high pressure. The microstructure of the μc-Si:H thin films was studied by the Raman and XRD spectra. It was found that the crystal fraction and grain size increased with the thickness of the thin film when the thickness was less than 1000 nm, and then came to saturation when the thickness was higher than 1000 nm. However, the performance of solar cells decreased obviously when the thickness increased from 1000 nm to 2000 nm. Considering the microstructure properties and the ion bombardment during the high rate process, we investigated the controlled microstructure evolution and the improved material quality by discharge power profiling, which improved the performance of solar cells. By optimizing the profiling parameters, such as the amount and the rate of change in discharge power, a high efficiency of 9.36% was obtained with an i-layer deposition rate of 1.2 nm/s. Furthermore, we used the improved μc-Si:H cell in an a-Si:H/μc-Si:H double-junction structure and achieved an initial active-area cell efficiency of 1114%.

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

INFLUENCE OF AMORPHOUS SILICON INCUBATION LAYER ON THE CHARACTERS OF HIGH RATE DEPOSTED MICROCRYSTALLINE SILICON SOLAR CELLS

Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells

Microcrystalline Silicon Solar Cells Deposited at High Rates in A Single Chamber

Microcrystalline Silicon‐carbon Alloys As Anti‐reflection Window Layers in High Efficiency Thin Film Silicon Solar Cells

Deposition of Microcrystalline Silicon Thin Films for Solar Cells by Vhf-Pecvd

Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells

Role of gas residence time in the deposition rate and properties of rnicrocrystalline silicon films

Microcrystalline silicon carbide window layers in thin film silicon solar cells

Microcrystalline Silicon Thin Film Solar Cells with Microcrystalline Silicon Carbide Window Layers and Silicon Absorber Layers Both Prepared by Hot‐Wire CVD

Fabrication of High Growth Rate Solar-Cell-quality C-Si:H Thin Films by VHF-PECVD

Optimization of High Rate Growth High Quality Μc-Si:H Thin Films and Its Application to the Solar Cells

Research Progresses on High Efficiency Amorphous and Microcrystalline Silicon-Based Thin Film Solar Cells

Structural Evolution Optimization at P/i Interface and in the Bulk Intrinsic‐layer for High Efficiency Microcrystalline Silicon Solar Cells

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Controlling Structural Evolution by VHF Power Profiling Technique for High-efficiency Microcrystalline Silicon Solar Cells at High Deposition Rate

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films

Hydrogenated microcrystalling silicon single-junction NIP solar cells

Study of microcrystalline silicon solar cells fabricated by very high frequency plasma-enhanced chemical vapor deposition

Key Issues for High-Efficiency Silicon Thin Film Solar Cells Prepared by RF-PECVD under High-Pressure-depletion Conditions