Microcrystalline Silicon‐carbon Alloys As Anti‐reflection Window Layers in High Efficiency Thin Film Silicon Solar Cells

Tao Chen,Yuelong Huang,Deren Yang,Reinhard Carius,Friedhelm Finger
DOI: https://doi.org/10.1002/pssr.200802119
2009-01-01
Abstract:Microcrystalline silicon‐carbide (μc‐SiC:H) films were prepared using hot wire chemical vapor deposition at low substrate temperature. The μc‐SiC:H films were employed as window layers in microcrystalline silicon (μc‐Si:H) solar cells. The short‐circuit current density (JSC) in these n‐side illuminated n–i–p cells increases with increasing the deposition time tW of the μc‐SiC:H window layer from 5 min to 60 min. The enhanced JSC is attributed to both the high transparency and an anti‐reflection effect of the μc‐SiC:H window layer. Using these favourable optical properties of the μc‐SiC:H window layer in μc‐Si:H solar cells, a JSC value of 23.8 mA/cm2 and cell efficiencies above 8.0% were achieved with an absorber layer thickness of 1 μm and a Ag back reflector. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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