Microcrystalline SiGe Prepared by VHF-PECVD for Thin Film Solar Cells

GU Shi-bin,HU Zeng-xin,ZHANG Jian-jun,SUN Jian,YANG Rui-xia
DOI: https://doi.org/10.3321/j.issn:1005-0086.2007.05.009
2007-01-01
Abstract:A series of silicon-germanium (μc-SiGe) thin films were prepared at different substrate temperature (Tsub) and power by using VHF-PECVD technique.The films were analyzed by micro-Raman spectroscopy and scanning electron microscope.We found that the structure of the films changed from amorphous state to microcrystalline state with the increasing of (Tsub) and power.A μc-SiGe solar cell was fabricated with this material,whose configuration was glass/SnO2/p-μc-Si:H/i-μc-SiGe:H/n-μc-Si:H/Al.The conversion efficiency of 4.2% was achieved (Voc=0.335 V,Jsc=20.16 mA/cm2,FF=41.938%).
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