Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

A PRELIMINARY STUDY ON MICROCRYSTALLINE SILICON MATERIALS AND SOLAR CELLS FABRICATED BY VHF-PECVD

Fabrication of Microcrystalline Silicon Materials and Microcrystalline Silicon Solar Cells and Study on Their Properties

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

STUDY ON MICROCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATE

Influence of contact characteristics of SnO2/P on fill factor of solar cell

Fabrication of 1nm/s High Deposition Microcrystalline Silicon and Its Application in Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Key Issues for High-Efficiency Silicon Thin Film Solar Cells Prepared by RF-PECVD under High-Pressure-depletion Conditions

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study

Microcrystalline SiGe Prepared by VHF-PECVD for Thin Film Solar Cells

STUDY OF RELATIONSHIP BETWEEN MICROCRYSTALLINE SILICON THIN FILM AND SOLAR CELLS

PROPERTIES OF PECVD SiNx FILM FOR SOLAR CELLS

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

Study on Quantum Efficiencies of Microcrystalline Silicon Solar Cells on Flexible Substrates

Doped Microcrystalline Silicon Layers for Solar Cells by 13.56 Mhz Plasma-Enhanced Chemical Vapour Deposition

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate