Abstract:Microcrystalline silicon film has attracted significant attention in solar cells for its wavelength response and stability,plasma enhanced chemical vapor deposition(PECVD) allows the production of a wide range of silicon thin films with varying degrees of disorder.In this paper,microcrystalline silicon films were fabricated by using a 27.12MHz PECVD system.The influence behavior of deposition parameters was systematically investigated by using Raman spectroscopy,X-ray diffraction,scanning electron microscopy,atomic force microscopy,and Fourier transform infrared spectroscopy.The epitaxial growth mechanism is discussed,the formation and evolvement of the incubation layer is analyzed,including the crystalline fraction and column grain growth.The Raman and SEM observations display the different features between the bottom and top surfaces of a silicon film.In the initial nucleus-formation process,the incubation layer embedded with clusters and nanocrystals is first formed having a thickness of several tens nanometers,then the amorphous fraction gradually reduces and a microcrystalline phase forms during the following process.The protocrystalline grains are self-assembled into a large size,the column grains with the diameter of about one hundred nanometers are formed along the growth direction.FTIR data reveal the absorption band at 2100cm-1 arises from the SiH-bonds located at grain boundaries or cluster's surfaces.In addition,the optimized plasma energy is benefit to restrain oxygen effect during growth process.It is important for a high quality film to systematically and comprehensively adjust the growth parameters including temperature,pressure,RF power,and SiH4/H2 ratio,even the radio frequency.The present investigation is helpful to understand the microstructure features and epitaxial growth mechanism of microcrystalline silicon films,and useful to improve their quality and properties for the applications in solar cells.

The Study of Microcrystalline Silicon Thin Films Prepared by PECVD

SEM Research of SiO2 Thin Film on Inner Wall of Glass Container by PECVD

Characteristics of microcrystalline silicon films grown by plasma enhanced chemical vapor deposition

Study of XRD on Microcrystalline Silicon Thin Films Prepared by RF-PECVD

Influence of Substrate on the Growth of Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

High-Rate Deposition of Microcrystalline Silicon Thin Film by Multi-Step Method

Analysis of Silicon Thin Film Prepared at Different Hydrogen Dilutions by VHF-PECVD

Fabrication of Microcrystalline Silicon Films by VHF-PECVD and Their Microstructure Study

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Structure Studies of Microcrystalline Silicon Thin Film Using Raman Scattering and Photo Thermal Deflection Spectra

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Formation Mechanism of Incubation Layers in the Initial Stage of Microcrystalline Silicon Growth by PECVD

Study of microstructure and defects in hydrogenated microcrystalline silicon films

Microstructure Characterization of Microcrystalline Silicon Thin Films Deposited by Very High Frequency Plasma-Enhanced Chemical Vapor Deposition by Spectroscopic Ellipsometry

Growth of Si-C-H film by RF plasma enhanced chemical vapor deposition

Effects of Substrate Temperature on the Properties of Silicon Oxide Films by PECVD

Study of SiO2 Thin Film Deposition by PECVD

Growth of Poly-Crystalline Si Films on Flexible Substrate by Hot Wire Chemical Vapor Deposition

STUDY ON MICROCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATE