Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

HAN Xiao-yan,GENG Xin-hua,GUO Qun-chao,YUAN Yu-jie,HOU Guo-fu,WEI Chang-chun,ZHANG Xiao-dan,SUN Jian,XUE Jun-ming,ZHAO Ying,CAI Ning,REN Hui-zhi,ZHANG De-kun
DOI: https://doi.org/10.3321/j.issn:1005-0086.2008.01.014
2008-01-01
Abstract:The microcrystalline silicon thin films with different thickness were prepared with a deposition rate of 1 nm/s on three kinds of substrates (corning 7059 glass,low crystalline fraction P1 type layer and high crystalline fraction P2 type layer) by varying the deposit time in a very high frequency plasma enhanced chemical vapor deposition(VHF-PECVD) process.The surface topogaphy and crystalline fraction were characterized.The microstructure of high rate microcrystalline silicon was observed.The effect of substrate on the growth mechanism and microstructure was studied.Finally,the conditions of the P layer that is fit for pin solar cell were determined.
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