Abstract:The passivation engineering of the hole transport layer in perovskite solar cells (PSCs) has significantly decreased carrier accumulation and open circuit voltage (Voc) loss, as well as energy band mismatching, thus achieving the goal of high-power conversion efficiency. However, most devices incorporating organic/inorganic buffer layers suffer from poor stability and low efficiency. In this article, we have proposed an inorganic buffer layer of Cu2O, which has achieved high efficiency on lower work function metals and various frequently used hole transport layers (HTLs). Once the Cu2O buffer layer was applied to modify the Cu/PTAA interface, the device exhibited a high Voc of 1.20 V, a high FF of 75.92%, and an enhanced PCE of 22.49% versus a Voc of 1.12 V, FF of 69.16%, and PCE of 18.99% from the (PTAA/Cu) n-i-p structure. Our simulation showed that the application of a Cu2O buffer layer improved the interfacial contact and energy alignment, promoting the carrier transportation and reducing the charge accumulation. Furthermore, we optimized the combinations of the thicknesses of the Cu2O, the absorber layer, and PTAA to obtain the best performance for Cu-based perovskite solar cells. Eventually, we explored the effect of the defect density between the HTL/absorber interface and the absorber/ETL interface on the device and recommended the appropriate reference defect density for experimental research. This work provides guidance for improving the experimental efficiency and reducing the cost of perovskite solar cells.

Influence of Low Rate P/I Interface Layer on the Performance of High Growth Rate Microcrystalline Silicon Solar Cells

Reduced Lattice Mismatch at the Interface of Perovskite and LaNiO3 Hole Transport Layers for Highly Efficient P–i–n Perovskite Solar Cells

Mechanism Insight into the Effect of I/P Buffer Layer on the Performance of NIP-type Hydrogenated Microcrystalline Silicon Solar Cells

Improving the performance of high-efficiency silicon heterojunction solar cells through low-temperature deposition of an i-a-Si:H anti-epitaxial buffer layer

Study on the Growth Mechanism and Microstructure of High Rate Growth Μc-Si:H Thin Films

Role of the Buffer at the Interface of Intrinsic A-Si:H and P-Type A-Si:H on Amorphous/crystalline Silicon Heterojunction Solar Cells

Microcrystalline Silicon‐carbon Alloys As Anti‐reflection Window Layers in High Efficiency Thin Film Silicon Solar Cells

Improvement in Performance of Hydrogenated Amorphous Silicon Solar Cells with Hydrogenated Intrinsic Amorphous Silicon Oxide P/i Buffer Layers

Performance Optimization of P-I-n Type Microcrystalline Silicon Thin Films Solar Cells Deposited in Single Chamber

Influence of the Total Gas Flow Rate on High Rate Growth Microcrystalline Silicon Films and Solar Cells

STUDY ON MICROCRYSTALLINE SILICON THIN FILM SOLAR CELLS ON FLEXIBLE SUBSTRATE

Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure

Improved Interface Microstructure Between Crystalline Silicon and Nanocrystalline Silicon Oxide Window Layer of Silicon Heterojunction Solar Cells

Effect of A-Si : H Interface Buffer Layer on the Performance of Hydrogenated Amorphous Silicon Germanium Thin Film Solar Cell

High Conductivity Intrinsic Nanocrystalline Silicon Film and As Buffer Layer in Thin Film Solar Cells

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

Boron Doped Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Layer-by-layer Technique and Its Application in N-I-p Flexible Amorphous Silicon Thin Film Solar Cells

Microcrystalline Silicon Materials and Solar Cells with High Deposition Rate

The Investigation of the Influence of a Cu2O Buffer Layer on Hole Transport Layers in MAPbI3-Based Perovskite Solar Cells

Research on the Boron Contamination at the P/i Interface of Microcrystalline Silicon Solar Cells Deposited in a Single PECVD Chamber

Influence of Substrate on the Growth of Microcrystalline Silicon Thin Films Deposited by Plasma Enhanced Chemical Vapor Deposition