Abstract:Ion implantation is a suitable and promising solution for the massive industrialization of boron doping, which is a crucial process step for most next‐generation solar cells based on crystalline silicon (c‐Si). However, the use of ion implantation for boron doping is limited by the high temperature (in the 1050°C range) of the subsequent activation anneal, which is essential to dissolve the boron clusters and reach a high‐emitter quality. In this work, we propose the use of plasma‐immersion ion implantation (PIII) from B2H6 gas precursor instead of the standard beamline ion implantation (BLII) technique to decrease this temperature down to 950°C. PIII and BLII boron emitters were compared with annealing temperatures ranging from 950°C to 1050°C. Contrary to BLII, no degradation of the emitter quality was observed with PIII implants annealed at 950°C along with a full activation of the dopants in the emitter. At 1000°C, emitter saturation current densities (J0e) below 21 fA/cm2 were obtained using the PIII technique regardless of the tested implantation doses for sheet resistances between 110 and 160 Ω/sq. After metallization steps, the metal/emitter contact resistances were assessed, indicating that these emitters were compatible with a conventional metallization by screen‐printing/firing. The PIII boron emitters' performances were further tested with their integration in n‐type passivated emitter rear totally diffused (PERT) solar cells fully doped by PIII. Promising results already show a conversion efficiency of 20.8% using a lower annealing temperature than with BLII and a reduced production cost.

Research on the Boron Contamination at the P/i Interface of Microcrystalline Silicon Solar Cells Deposited in a Single PECVD Chamber

Investigation in Feasibility of Molybdenum As A Back Contact Layer for Silicon Based Quantum Dot Solar Cells

Performance Optimization of P-I-n Type Microcrystalline Silicon Thin Films Solar Cells Deposited in Single Chamber

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Electrical Deactivation of Boron in p+-Polycrystalline Silicon/SiOx/Crystalline Silicon Passivating Contacts for Silicon Solar Cells

Influence of Low Rate P/I Interface Layer on the Performance of High Growth Rate Microcrystalline Silicon Solar Cells

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Study on Permanent Deactivation of the Light-Induced Degradation in P-Type Compensated Crystalline Silicon Solar Cells

Control of crystalline volume fraction of μC-Si thin film using 40.68 MHz PECVD system for solar cell application

Oxygen and Carbon Precipitation in Multicrystalline Solar Silicon

Deposition of P-Type Nanocrystalline Silicon Using High Pressure in a VHF-PECVD Single Chamber System

Reduced adverse effects on Si thin film solar cells caused by growth chamber air exposure

An Industrial Solution to Light-Induced Degradation of Crystalline Silicon Solar Cells

Plasma‐immersion ion implantation: A path to lower the annealing temperature of implanted boron emitters and simplify PERT solar cell processing

Single-chamber Deposition of Intrinsic Microcrystalline Silicon Thin Film and Its Application in Solar Cells

SiC Contaminations in Polycrystalline-Silicon Wafer Directly Grown from Si Melt for Photovoltaic Applications

Suppression of Interfacial Boron Accumulation and Defect Density in Molecular Beam Epitaxial Silicon

Effects of PECVD preparation conditions and microstructures of boron-doped polysilicon films on surface passivation of p-type tunnel oxide passivated contacts

Bi-layer in-situ phosphorus doped poly-Si films by PECVD for blistering-free high-efficiency industrial TOPCon solar cells