Abstract:In this work, boron-doped ZnO (ZnO:B) thin films grown by low-pressure chemical vapor deposition (LPCVD) on ITO glass substrates with film thicknesses of 1, 2, and 3 µm are analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic-force microscopy (AFM), cathodoluminescence (CL), and light transmittance measurements. The effects of boron doping on the grain crystallization, grain sizes, film strains, surface texture, and light transmittance of ZnO:B thin films are studied from the analysis of these measurements. XRD results show that ZnO:B and undoped ZnO thin films both have the largest percentage of the (110) crystalline grains which form ridge-like structures at the surfaces of the thin films. These ridge-like structures of (110) grains provide sharper surface textures than the polygon structures of (100) grains. Hence, ZnO:B and undoped ZnO thin films grown on ITO glass substrates both have good-quality surface textures which can provide light-trapping functions for solar-cell applications. In addition, the surfaces of ZnO:B thin films are less sharp and rough than those of undoped ZnO thin films due to their smaller grain sizes. Boron-doping decreases the ZnO grain sizes and reduces the surface textures of ZnO thin films grown on ITO glass substrates. Since ZnO:B thin films have smaller average grain sizes than undoped ZnO thin films, ZnO:B thin films have larger quantum-size effects and hence larger band-gap energies and shorter CL emission wavelengths. Furthermore, thicker films have more ZnO(110) grains with ridge-like structures and have better surface textures which can provide better light trapping than thinner ones. However, thicker films are shown to have poorer optical transparency. The results of this work provide useful information for growth of textured well-faceted ZnO:B films on ITO glass substrates that can potentially be utilized for various applications, such as solar cells.

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Study on solid-phase crystallization of B-doped a-Si:H film

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Boron doped amorphous diamond window layer deposited by filtered arc for amorphous silicon alloy p–i–n solar cells

Deposition of Boron-Doped Nanocrystalline Silicon Carbide Thin Films Using H2-Ar Mixed Dilution for the Application on Thin Film Solar Cells

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Photovoltaic Characteristics of Amorphous Silicon Solar Cells Using Boron Doped Tetrahedral Amorphous Carbon Films As P-Type Window Materials

Study of Boron-Doped Zinc Oxide Film Serving As Front Contact with High Haze Used in Amorphous Silicon Thin Film Solar Cells

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Growth of Textured ZnO Thin Films and Their Front Electrodes for Application in Solar Cells

Development of high conducting phosphorous doped nanocrystalline thin silicon films for silicon heterojunction solar cells application

Using phosphorus doped hydrogenated silicon oxycarbide film as a window layer on the light entrance side of silicon heterojunction solar cells: The role of phase separation on electron transport

Growth, characterization, and analysis of the nanostructures of ZnO:B thin films grown on ITO glass substrates by a LPCVD: a study on the effects of boron doping

Boron-doped amorphous diamondlike carbon as a new p-type window material in amorphous silicon p-i-n solar cells

Doping silicon nanocrystals with boron and phosphorus

Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Microstructure and Photoelectric Properties of P-Doped Silicon-Rich Sinx Film As an N-Type Layer for Pin-Type Amorphous Silicon Thin Film Solar Cells