Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Growth and Characterization of Boron-Doped na-Si:H Films Used as Window Layer Material of Solar Cells

Study on solid-phase crystallization of B-doped a-Si:H film

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Doping silicon nanocrystals with boron and phosphorus

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Effect of Boron Doping on the Electrical Conduction of Tetrahedral Amorphous Carbon Films

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Deposition and Thermoelectric Properties of N-Doped SiC Thick Films

Deposition of Boron-Doped Nanocrystalline Silicon Carbide Thin Films Using H2-Ar Mixed Dilution for the Application on Thin Film Solar Cells

Electrical Transport Properties Of The Si-Doped Cubic Boron Nitride Thin Films Prepared By In Situ Cosputtering

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities