Abstract:The mechanical properties of Czochralski (Cz) silicon wafers dictate fundamental limits on the fabrication of diverse electronic devices. Certain impurities with sufficiently high concentrations may affect the mechanical properties of Cz silicon. The underlying mechanisms for such influences have been being explored in the past decades. In this work, the effects of antimony (Sb)- and tin (Sn)-doping at 1018 cm−3 level on the mechanical properties of Czochralski (Cz) silicon have been comparatively investigated. Since Sb and Sn have quite close tetrahedral covalent radii in silicon, the lattice strains resulted from Sb- and Sn-doping and their consequent effects on the mechanical properties of silicon are approximately identical. In silicon, Sb is an electrically active impurity while Sn is a neutral one. Therefore, the present work can essentially reveal the role of electrical activity of Sb playing in the mechanical properties of Cz silicon. It is found that Sb-doped Cz (Sb-Cz) silicon possesses a slightly higher hardness than Sn-doped Cz (Sn-Cz) silicon. Moreover, the dislocation gliding at 500 or 600 °C in Sb-Cz silicon requires a much larger critical resolved shear stress than that in Sn-Cz silicon. At such two temperatures, Sb-Cz silicon remains to be n-type in electrical conduction. The aforementioned two results are believed to be ascribed to the resistance of dislocation motion by the Coulomb interaction between the positively charged Sb ions and the dislocations that are deep-level acceptors thus being negatively charged in Sb-Cz silicon. As the temperature is increased to 700 °C and above, the dislocation gliding in Sb-Cz silicon is not substantially different from that in Sn-Cz silicon. At such elevated temperatures, Sb-Cz silicon becomes intrinsic in electrical conduction like Sn-Cz silicon. In this context, there is no Coulomb interaction between Sb ions and dislocations anymore to impede the dislocation gliding in Sb-Cz silicon. In addition, it is found that the indentation fracture toughness of Sb-Cz is almost the same as that of Sn-Cz silicon. Actually, the fracture of silicon is essentially a cleavage process, to which the electrical activity of Sb is irrelevant.

The Change Of Electronic Transport Behaviors By P And B Doping In Nano-Crystalline Silicon Films With Very High Conductivities

Measurement of Electron-Density and Mobility in P-Doped A-Si-H and Mc-Si-H Films

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

The Location and Doping Effect of Boron in Si Nanocrystals Embedded Silicon Oxide Film

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Comparative Study on P and B Doped Nano-Crystalline Si Multilayers

Systematic Investigations on Doping Dependent Thermal Transport Properties of Single Crystal Silicon by Time-Domain Thermoreflectance Measurements

Doping silicon nanocrystals with boron and phosphorus

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Silicon Doping Effect on the Crystallization Behavior of Ge2Sb2Te5 Film

Boron- and Phosphorus-Hyperdoped Silicon Nanocrystals

Doping of Nanocrystalline Four Hexagnol Silicon Carbide Films

Effects of Antimony- and Tin-Doping on the Mechanical Propertiesof Czochralski Silicon: Revealing the Role of Electrical Activity of Antimony

The Study of Boron-Doped Nanocrystalline Silicon Film with High Conductivity

Unravelling Doping Effects on Pedot at the Molecular Level: from Geometry to Thermoelectric Transport Properties

Influence of Doping and Microstructure on Electrical Properties of Doped Silicon Thin Films

Isotope Doping-Induced Crossover Shift in the Thermal Conductivity of Thin Silicon Nanowires.