Abstract:Effects of boron and phosphorus doping on the structural, electrical, and optical properties of silicon nanocrystals in superlattice thin films were investigated. Silicon nanocrystals were fabricated via magnetron sputtering of stoichiometric silicon rich oxide and silicon dioxide bilayers followed by high temperature annealing at 1100 degrees Celsius. The characterization techniques used include: high-resolution transmission electron microscopy with energy filtering, grazing incidence x-ray diffraction, Raman, photoluminescence, and photothermal deflection spectroscopy, as well as electrical measurements. Results showed that phosphorus doping causes the loss of the bilayer structure and an increase in the average size of the silicon nanocrystals due to softening of the silicon dioxide matrix during post-sputter annealing. The result was a decrease in quantum confinement and a redshift in photoluminescence spectrum with an absorption profile similar to crystalline silicon. The undoped (intrinsic) sample maintained its bilayer structure and displayed stronger quantum confinement with higher photoluminescence peak energy and higher absorption coefficient. In-between, the boron doped sample was more similar structurally to the intrinsic sample, although merging between bilayers resulted in an extensive silicon nanocrystalline network. Optically, it displayed different effects due to photoluminescence quenching and free carrier absorption. Finally, both doped samples exhibited a decrease in electrical resistivity.

Temperature-dependent carrier transport behaviors in phosphorus-doped silicon nanocrystals/silicon carbide multilayers

Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO 2 Multilayers

Experimental Observations on Metal-Like Carrier Transport and Mott Hopping Conduction Behaviours in Boron-Doped Si Nanocrystal Multilayers

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Enhanced carrier mobility in Si nano-crystals via nanoscale phosphorus doping

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Size Dependence of Phosphorus Doping in Silicon Nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Formation and Electrical Properties of High Conductively Doped Nanocrystalline Silicon Embedded in Amorphous Silicon Carbide

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

Formation of High Conductive Nano-Crystalline Silicon Embedded in Amorphous Silicon-Carbide Films with Large Optical Band Gap

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Lightly boron and phosphorus co-doped silicon nanocrystals

Properties of silicon nanocrystals with boron and phosphorus doping fabricated via silicon rich oxide and silicon dioxide bilayers

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Atomic-scale study on the dopant distribution in phosphorus and boron-doped Si nanocrystals/SiO2 multilayers

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals