Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

Chao Song,Jun Xu,Quanbiao Wang,Guowei Zha,Wei Li,Kunji Chen

DOI: https://doi.org/10.1016/j.ssc.2011.02.018

IF: 1.934

2011-01-01

Solid State Communications

Abstract:Phosphorus- and boron-doped hydrogenated amorphous silicon thin films were prepared by the plasma-enhanced chemical vapor deposition method. As-deposited samples were thermally annealed at various temperatures to get nanocrystalline Si with sizes around 10 nm. X-ray photoelectron spectroscopy measurements demonstrated the presence of boron and phosphorus in the doped films. It is found that the nanocrystallization occurs at around 600 degrees C for the B-doped films, while it is around 700-800 degrees C for the P-doped samples. For the P-doped samples, the dark conductivity decreases at first and then increases with the annealing temperature. While for the B-doped samples, the dark conductivity monotonously increases with increasing annealing temperature. As a result, the carrier transport properties of both P- and B-doped nanocrystalline Si films are dominated by the gradual activation of dopants in the films. The conductivity reaches 22.4 and 193 S cm(-1) for P- and B-doped sample after 1000 degrees C annealing. (C) 2011 Elsevier Ltd. All rights reserved.