Abstract:Hydrogenated amorphous Si thin films were prepared by plasma-enhanced chemical vapor deposition. As-deposited samples were annealed at different temperatures to obtain nano-crystalline Si. During the transition process from amorphous to nano-crystalline structure, Raman scattering spectroscopy was used to characterize the changes of microstructures. The temperature-dependent conductivity was measured in order to understand the electric transport processes in the films. It was found that the crystallization occurs at around 700 °C. The crystal volume fraction （ X c ） increases with the increase of annealing temperature, and in the case of the Si film annealed at 1000 ℃, the X c is beyond 90%. The carrier transport characteristics in the films annealed at the different temperatures are different from the as-deposited film. For the sample annealed at 700 ℃, the carrier transport is strongly influenced by the defect states resulting from the effusion of hydrogen, and it is controlled by the hopping conduction of the localized states in the difference measurement temperature regions causing the dual activation energies. For the highly crystallized Si film annealed at 1000 °C, the transport process is strongly influenced by the transport of the extended states in the crystalline silicon, while in the high temperature region, the quantum tunneling process plays an important role in the carrier transport property.

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Properties of Electric Transport in Crystallized Silicon Films under Different Annealing Temperatures

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Carrier Transport of Doped Nanocrystalline Si Formed by Annealing of Amorphous Si Films at Various Temperatures

Effect of annealing on microstructure and photoluminescence of nano-composite silicon film

Novel Sandwich Structure for Aluminum Induced Crystallization of Amorphous Silicon Thin Films at Low Temperature

High temperature annealing of hydrogenated amorphous silicon carbide thin films

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon

Influence of annealing on microstructures and photoluminescence of nano-composite silicon film

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Microscopic Understanding of the Carrier Transport Process in Ge Nanocrystals Films

The Carrier Transport Properties of B-Doped Si Nanocrystal Films with Various Doping Concentrations

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

Film thickness reduction of thermally annealed hydrogenated amorphous silicon prepared with plasma‐enhanced chemical vapor deposition

Transport Properties of Μc-Si:H Films Prepared by Very High Hydrogen-Diluted Silane Plasma

Annealing Effect on Optical and Electronic Properties of Silicon Rich Amorphous Silicon-Carbide Films

Formation of high quality nano-crystallized Ge films on quartz substrates at moderate temperature

Transport properties of µc-Si:H films prepared by very high hydrogen-diluted silane plasma