Abstract:The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and Secondary Ion Mass Spectroscopy (SIMS). The nanocrystals were formed after heat treatment at high temperature of a sputtered 10 nm thick silicon rich oxide on 3 nm SiO$_2$ layer made by Rapid Thermal Oxidation (RTO) of silicon. Nanocrystals precipitate when the excess silicon concentration exceeds 50 area %. Below this percentage amorphous silicon nanoclusters were found. In-situ heat treatment of the samples in the TEM showed that the crystallization requires a temperature above 800$^o$C. The nanocrystals precipitate in a 4 nm band, 5 nm from the Si substrate and 4 nm from the SiO$_2$ sample surface. The silicon nucleates where the excess Si concentration is the highest. The top surface has less excess Si due to reaction with oxygen from the ambient during annealing. The SiO$_2$-RTO layer is more Si rich due to Si diffusion from the SiO$_2$-Si layer into RTO. Twinning and stacking faults were found in nanocrystals with 4-10 nm in diameter. These types of defects may have large effects upon the usability of the material in electronic devices. Both single and double twin boundaries have been found in the nanocrystals by high resolution transmission electron microscopy (HRTEM). Image simulations were carried out in order to obtain more information about the defects and nanocrystals. The stacking faults are extrinsic and located in the twin boundaries.

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Structural Nature of Nanocrystalline Silicon

Study on structural properties of nanocrystalline silicon films

Microstructure Characterization of Oxidized Nanocrystalline Si:H Film by Transmission Electron Microscopy

Structure Of Nc-Si : H Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Evaluation Of Microstructures And Carrier Transport Behaviors During The Transition Process From Amorphous To Nanocrystalline Silicon Thin Films

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Characteristics of Disorder and Defect in Hydrogenated Amorphous Silicon Nitride Thin Films Containing Silicon Nanograins

Growth Morphology and Characteristic Structure in Nanocrystalline Si Film of High Conductivity

Study on Crystallization Mechanism of Hydrogenated Silicon Film

Elucidation of microstructure of single-phase microcrystalline silicon based on crystallite size distributions

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Microstructural Studies of Noncrystalline Solid Silicon Films by To-Like Modes of Raman-Spectra

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Characterization of amorphous and crystalline silicon nanoclusters in ultra thin silica layers

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Crystallization and Disappearance of Defects of the Annealed Silicon Nanowires

Microstructure Modulation of Silicon Planted Glass with Low Mirror Reflection

Microscopic study of electrical properties of CrSi2 nanocrystals in silicon

High Electron Mobility in Well Ordered and Lattice-Strained Hydrogenated Nanocrystalline Silicon