Abstract:Silicon thin films with a variable content of nanocrystalline phase were deposited on single-crystal silicon and glass substrates by inductively coupled plasma-assisted chemical vapor deposition using a silane precursor without any hydrogen dilution in the low substrate temperature range from 100 to 300 degrees C. The structural and optical properties of the deposited films are systematically investigated by Raman spectroscopy, x-ray diffraction, Fourier transform infrared absorption spectroscopy, UV/vis spectroscopy, scanning electron microscopy and high-resolution transmission electron microscopy. It is shown that the structure of the silicon thin films evolves from the purely amorphous phase to the nanocrystalline phase when the substrate temperature is increased from 100 to 150 degrees C. It is found that the variations of the crystalline fraction f(c), bonded hydrogen content C(H), optical bandgap E(Tauc), film microstructure and growth rate R(d) are closely related to the substrate temperature. In particular, at a substrate temperature of 300 degrees C, the nanocrystalline Si thin films of our interest feature a high growth rate of 1.63 nm s(-1), a low hydrogen content of 4.0 at.%, a high crystalline fraction of 69.1%, a low optical bandgap of 1.55 eV and an almost vertically aligned columnar structure with a mean grain size of approximately 10 nm. It is also shown that the low-temperature synthesis of nanocrystalline Si thin films without any hydrogen dilution is attributed to the outstanding dissociation ability of the high-density inductively coupled plasmas and effective plasma-surface interactions during the growth process. Our results offer a highly effective yet simple and environmentally friendly technique to synthesize high-quality nanocrystalline Si films, vitally needed for the development of new-generation solar cells and other emerging nanotechnologies.

Study on structural properties of nanocrystalline silicon films

Structural Nature of Nanocrystalline Silicon

Microstructures and Characteristics of Nanosize Crystalline Silicon Films

Structure Of Nc-Si : H Films

Microstructure and Conductivity of Large Area Nanocrystalline Silicon Films Grown by Specially Designed Thermal-Assisted Chemical Vapor Deposition

Growth and Mechanical Properties of Amorphous and Nanostructured SiC films

Study on the Structural and Optic-Electronical Properties of 4h Polytype-Sic Films

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Structural and optical characterizations of nanostructured diamond films grown on Si(001) substrates

Study on crystallization of hydrogenated nanocrystalline silicon carbon films

Preparation of noncrystalline silicon carbon films by using heavily hydrogen diluted silane and ethene

The Nc-Si Films With Controlled Crystal Structure And Electrical Conductivity Via The Re-Crystallization Approach

Crystallization of Amorphous SiC and Superhardness Effect in CrAlN/SiC Nanomultilayered Films

Crystallized Silicon Nanostructures - Experimental Characterization and Atomistic Simulations

RF power dependence of the properties of n-type nanocrystalline silicon films deposited by a low-frequency inductively coupled plasma

Structural Evolution of Nanocrystalline Silicon Thin Films Synthesized in High-Density, Low-Temperature Reactive Plasmas

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Raman Spectra of Nanocrystalline Silicon Films

Microstructures and Carrier Transport Behaviors of Nanocrystalline Silicon Thin Films

Measurement and Study on Optical Properties of Nano-crystalline Silicon Films

Study on Crystallization Mechanism of Hydrogenated Silicon Film