Abstract:The phosphorus doped n-type hydrogenated microcrystalline silicon (n-μc-Si:H) thin films are prepared, at the two low substrate temperatures of room temperature and 200°C, through a low-frequency inductively coupled plasma assisted chemical vapor deposition. The effect of the substrate temperature on the structural properties of the thin films, such as the X-ray Diffraction (XRD) patterns and the Raman spectra, is studied. The XRD measurements show that the diffraction orientations of the thin films present an obvious change when the radio frequency power is increased from 1300W to 2300W. The Raman spectra of the thin films deposited at room temperature unambiguously present a phase transition from the amorphous structure to microcrystalline structure whereas no structural phase transition is observed for the thin films deposited at 200°C. The effect of the substrate temperature on the crystalline volume fraction of the thin films presents a large difference for the radio frequency power in the range of 1300W–1700W, while the difference becomes small when the power is increased from 1700W to 2300W. The deposition rate and the radio frequency power-sheet resistance curve of the thin films deposited at room temperature are obviously different from those of the thin films prepared at 200°C. It is attributed to the joint effect of the radio frequency power and substrate temperature on the doping concentration. The electron energy distribution function of the species in the chamber is mainly distributed in a low energy range.

RF power dependence of the properties of n-type nanocrystalline silicon films deposited by a low-frequency inductively coupled plasma

Influence of RF power on structural optical and electrical properties of hydrogenated nano-crystalline silicon (nc-Si:H) thin films deposited by PE-CVD

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Optical Properties Study of Silicon Oxynitride Films Deposited by RF Magnetron Sputtering

Highly Doped P-Type Microcrystalline Silicon Thin Films Fabricated by A Low-Frequency Inductively Coupled Plasma at A Low Temperature

The Microstructure and Optical Properties of Crystallized Hydrogenated Silicon Films Prepared by Very High Frequency Glow Discharge

Influence of RF Power Density on the Nanocrystallization of Ar Diluted Si:H Thin Films Deposited by PECVD

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Highly Doped P-Type Nanocrystalline Silicon Thin Films Fabricated by Low-Frequency Inductively Coupled Plasma Without H-2 Dilution

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Study on structural properties of nanocrystalline silicon films

High quality nanocrystalline diamond films grown by RF-HFCVD

Morphological Characteristics and Optical Properties of Hydrogenated Amorphous Silicon Thin Films

AC electrical properties of nanocrystalline silicon thin films

Growth mechanism of microcrystalline and polymorphous silicon film with pure silane source gas

Structure Of Nc-Si : H Films

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

Field Emission Properties of Nanocrystalline and Amorphous Silicon Carbon Nitride Prepared from Microwave Plasma Chemical Vapor Deposition

Low Stress Silicon Nitride Thin Film Deposition by PECVD

Nanocrystallization of a-Si:H thin films deposited by PECVD under low argon dilution

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD