Abstract:The phosphorus doped n-type hydrogenated microcrystalline silicon (n-μc-Si:H) thin films are prepared, at the two low substrate temperatures of room temperature and 200°C, through a low-frequency inductively coupled plasma assisted chemical vapor deposition. The effect of the substrate temperature on the structural properties of the thin films, such as the X-ray Diffraction (XRD) patterns and the Raman spectra, is studied. The XRD measurements show that the diffraction orientations of the thin films present an obvious change when the radio frequency power is increased from 1300W to 2300W. The Raman spectra of the thin films deposited at room temperature unambiguously present a phase transition from the amorphous structure to microcrystalline structure whereas no structural phase transition is observed for the thin films deposited at 200°C. The effect of the substrate temperature on the crystalline volume fraction of the thin films presents a large difference for the radio frequency power in the range of 1300W–1700W, while the difference becomes small when the power is increased from 1700W to 2300W. The deposition rate and the radio frequency power-sheet resistance curve of the thin films deposited at room temperature are obviously different from those of the thin films prepared at 200°C. It is attributed to the joint effect of the radio frequency power and substrate temperature on the doping concentration. The electron energy distribution function of the species in the chamber is mainly distributed in a low energy range.

Highly Doped P-Type Microcrystalline Silicon Thin Films Fabricated by A Low-Frequency Inductively Coupled Plasma at A Low Temperature

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Highly Doped P-Type Nanocrystalline Silicon Thin Films Fabricated by Low-Frequency Inductively Coupled Plasma Without H-2 Dilution

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Doped Microcrystalline Silicon Layers for Solar Cells by 13.56 Mhz Plasma-Enhanced Chemical Vapour Deposition

RF power dependence of the properties of n-type nanocrystalline silicon films deposited by a low-frequency inductively coupled plasma

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Doping Effects in Co-deposited Mixed Phase Films of Hydrogenated Amorphous Silicon Containing Nanocrystalline Inclusions

The Influence of Radio Frequency Power on the Characteristics of Carbon-Rich Hydrogenated Amorphous Silicon Carbide Films

Modulation Effect of Plasma Power on Crystalline Volume Fraction of Silicon Films in the Phase Transition from A-Si:H to /spl Mu/c-Si:H

The Optoelectronic Properties of Silicon Films Deposited by Inductively Coupled Plasma CVD

High-conductive Nanocrystalline Silicon with Phosphorous and Boron Doping

Effects of Discharge Power on Silicon-based Films Fabricated by VHF-PECVD

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

A New Method Used to Control the Structure of High Rate Microcrystalline Silicon Thin Films

Controllability of structural and electrical properties of silicon films grown in atmospheric-pressure very high-frequency plasma

High Rate Deposition of Stable Hydrogenated Amorphous Silicon in Transition from Amorphous to Microcrystalline Silicon

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Effects of Total Gas Flow Rates on the High Rate Growth Microcrystalline Silicon Thin Films

Study of Structure and Temperature-Dependent Conductivity in N-Type Nc-Si:H Thin Films