Abstract:The phosphorus doped n-type hydrogenated microcrystalline silicon (n-μc-Si:H) thin films are prepared, at the two low substrate temperatures of room temperature and 200°C, through a low-frequency inductively coupled plasma assisted chemical vapor deposition. The effect of the substrate temperature on the structural properties of the thin films, such as the X-ray Diffraction (XRD) patterns and the Raman spectra, is studied. The XRD measurements show that the diffraction orientations of the thin films present an obvious change when the radio frequency power is increased from 1300W to 2300W. The Raman spectra of the thin films deposited at room temperature unambiguously present a phase transition from the amorphous structure to microcrystalline structure whereas no structural phase transition is observed for the thin films deposited at 200°C. The effect of the substrate temperature on the crystalline volume fraction of the thin films presents a large difference for the radio frequency power in the range of 1300W–1700W, while the difference becomes small when the power is increased from 1700W to 2300W. The deposition rate and the radio frequency power-sheet resistance curve of the thin films deposited at room temperature are obviously different from those of the thin films prepared at 200°C. It is attributed to the joint effect of the radio frequency power and substrate temperature on the doping concentration. The electron energy distribution function of the species in the chamber is mainly distributed in a low energy range.

Effect of Substrate Temperature on the Growth and Properties of Boron-Doped Micro Crystalline Silicon Films

Low Temperature Deposition of Boron-Doped Microcrystalline Si:H Thin Film and Its Application in Silicon Based Thin Film Solar Cells

Effect of Substrate Temperature on the Structural, Electrical and Optical Properties of Nanocrystalline Silicon Films in Hot-Filament Chemical Vapor Deposition

Electrical and Optical Properties of Boron‐doped Nanocrystalline Silicon Films Deposited by PECVD

Influence of Boron-doping on Electrical Properties of Na-Si:H Thin Film Prepared by PECVD

Influence of Substrate Temperature on the Microstructure and Optical Properties of Hydrogenated Silicon Thin Film Prepared with Pure Silane

Low-temperature preparation of phosphorus doped μc -Si:H thin films by low-frequency inductively coupled plasma assisted chemical vapor deposition

Effect of Temperature on Growth of Polycrystalline Silicon Thin Films Prepared via RTCVD

Influence of boron on the properties of intrinsic microcrystalline silicon thin films

Effects of Substrate Temperature on Structural, Optical and Morphological Properties of Hydrogenated Nanocrystalline Silicon Thin Films Prepared by Inductively Coupled Plasma Chemical Vapor Deposition

Effect of Substrate Temperature and Pressure on Properties of Micro Crystalline Silicon Films

Investigation of Microstructure and Photoelectric Properties of Boron- Doped Amorphous Silicon Films

Influence of Boron Doping on Microcrystalline Silicon Growth

Aluminum doped silicon carbide thin films prepared by hot-wire CVD: Influence of the substrate temperature on material properties

Varied Longitudinal Microstructure of Μc-Si: H Films by Tuning Substrate Temperature

Fabrication of High-Quality Boron-Doped Microcrystalline Silicon Thin Films on Several Types of Substrates

Effect of Substrate Temperature on the Optical Properties of A-Si:H Films by RF-PECVD

Fabrication of Microcrystalline Silicon Thin Film and the Study of Its Microstructure and Stability

Influence of Substrate Temperature on the Growth of Μc-Sige Thin Film

Influence of Substrate Temperature on the Morphology, Composition and Growth Rate of SiC Films Deposited by PECVD

Effects of Growth Temperature on Μc-Si:H Films Prepared by Plasma Assistant Magnetron Sputtering