Influence of Precursor A-Si:H Dehydrogenation on the Aluminum Induced Crystallization Process
Weiyuan Duan,Yu Qiu,Liping Zhang,Jian Yu,Jiantao Bian,Zhengxin Liu
DOI: https://doi.org/10.1016/j.matchemphys.2014.03.012
IF: 4.778
2014-01-01
Materials Chemistry and Physics
Abstract:Polycrystalline silicon (poly-Si) thin film grown on low cost substrates such as glass at low temperature is an attractive material for cost-effective solar cells. This work studied the influence of dehydrogenation of a-Si:H precursor on the crystallization behavior by aluminum induced crystallization (AIC) process below the eutectic temperature of 577 degrees C. The a-Si:H films were deposited by PECVD and aluminum was evaporated in a vacuum evaporation equipment, respectively. Some of the a-Si:H thin films were dehydrogenated in nitrogen atmosphere before aluminum evaporation. It was found that hydrogen content in a-Si:H drops to a stable value after annealing at 480 degrees C for 1 h. Micro-Raman spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction spectroscopy and scanning electron microscopy measurements were used to investigate the structural characteristics of the a-Si:H and the prepared poly-Si thin films. Our results show that although the dehydrogenation increases AIC temperature and reduces AIC rate, it can improve microstructural quality of poly-Si thin films, leading to less tensile stress, higher crystallinity, smoother and more conformal surface morphology. (C) 2014 Elsevier B.V. All rights reserved.